array(74) {
["id"]=>
string(5) "45478"
["pdf_add"]=>
string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18543q3a"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(76) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN(3.3x3.3).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(11) "CSD18543Q3A"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.528000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(15) "60V N CH MOSFET"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "60A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "9.9 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.7V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "14.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1150pF @ 30V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(11) "66W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(5) "18543"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591596"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
.jpg)
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述：
60V N CH MOSFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45478 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：60A（Tc）
Vgs(最大值)：±20V
功率-最大值：66W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD18543Q3A' ) LIMIT 1
供应商:
|
array(74) {
["id"]=>
string(5) "26658"
["pdf_add"]=>
string(48) "http://www.ti.com/lit/ds/symlink/csd25402q3a.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN%20(3.3x3.3).jpg"
["images"]=>
string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-PowerTDFN_(3.3x3.3).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-38916-2-ND"
["zzsbh"]=>
string(11) "CSD25402Q3A"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(5) "42500"
["cfkc"]=>
string(5) "10000"
["dj"]=>
string(8) "1.586000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET P-CH 20V 76A 8SON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(11) "76A（Tc）"
["qddy"]=>
string(11) "1.8V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "8.9 毫欧 @ 10A，4.5V"
["bt_id_vgs_zdz"]=>
string(14) "1.15V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "9.7nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "1790pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），69W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(5) "25402"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
.jpg)
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET P-CH 20V 76A 8SON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26658 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：76A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD25402Q3A' ) LIMIT 1
供应商:
|
array(74) {
["id"]=>
string(5) "27729"
["pdf_add"]=>
string(47) "http://www.ti.com/lit/ds/symlink/csd16411q3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN%20(3.3x3.3).jpg"
["images"]=>
string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-PowerTDFN_(3.3x3.3).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-24255-2-ND"
["zzsbh"]=>
string(10) "CSD16411Q3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(5) "12500"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.747000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 25V 14A/56A 8VSON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "25V"
["dl_lxlj"]=>
string(25) "14A（Ta），56A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(21) "10 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "3.8nC @ 4.5V"
["vgs_zdz"]=>
string(11) "+16V，-12V"
["bt_vds_srdr"]=>
string(13) "570pF @ 12.5V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "2.7W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(8) "CSD16411"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
NULL
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态：
修改
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 25V 14A/56A 8VSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27729 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：14A（Ta），56A（Tc）
Vgs(最大值)：+16V，-12V
功率-最大值：2.7W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD16411Q3' ) LIMIT 1
供应商:
库存:270
|
array(71) {
["id"]=>
string(3) "848"
["pdf_add"]=>
string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87333q3d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg"
["images"]=>
string(97) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/17/296%3B8VSON-1.05-3.3x3.3%3BDPB%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-37535-2-ND"
["zzsbh"]=>
string(11) "CSD87333Q3D"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.349270"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET 2N-CH 30V 15A 8SON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(31) "2 N 沟道（双）非对称型"
["fetgn"]=>
string(30) "逻辑电平栅极，5V 驱动"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(3) "15A"
["bt_id_vgs_rds"]=>
string(21) "14.3 毫欧 @ 4A，8V"
["bt_id_vgs_zdz"]=>
string(13) "1.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "4.6nC @ 4.5V"
["bt_vds_srdr"]=>
string(11) "662pF @ 15V"
["gn_zdz"]=>
string(2) "6W"
["gzwd"]=>
string(14) "125°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-POWERTDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3X3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "87333D"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述：
MOSFET 2N-CH 30V 15A 8SON
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 848 ) LIMIT 1
Fet类型：2 N 沟道（双）非对称型
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A
最大功率值：6W
工作温度：125°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87333Q3D' ) LIMIT 1
供应商:
|
array(74) {
["id"]=>
string(4) "9078"
["pdf_add"]=>
string(47) "http://www.ti.com/lit/ds/symlink/csd25404q3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN%20(3.3x3.3).jpg"
["images"]=>
string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-PowerTDFN_(3.3x3.3).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(13) "CSD25404Q3-ND"
["zzsbh"]=>
string(10) "CSD25404Q3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(5) "10000"
["dj"]=>
string(8) "2.208000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET P-CH 20V 104A 8VSON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(12) "104A（Tc）"
["qddy"]=>
string(11) "1.8V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "6.5 毫欧 @ 10A，4.5V"
["bt_id_vgs_zdz"]=>
string(14) "1.15V @ 250µA"
["bt_vgs_sjdh"]=>
string(13) "14.1nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "2120pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），96W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(8) "CSD25404"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET P-CH 20V 104A 8VSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9078 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：104A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），96W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD25404Q3' ) LIMIT 1
供应商:
|
array(71) {
["id"]=>
string(3) "489"
["pdf_add"]=>
string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd85312q3e"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(61) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-SON.jpg"
["images"]=>
string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4844/296_8-SON.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-37187-2-ND"
["zzsbh"]=>
string(11) "CSD85312Q3E"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(4) "2500"
["cfkc"]=>
string(5) "10000"
["dj"]=>
string(8) "3.829420"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET 2N-CH 20V 39A 8VSON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(25) "2 N 沟道（双）共源"
["fetgn"]=>
string(30) "逻辑电平栅极，5V 驱动"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(3) "39A"
["bt_id_vgs_rds"]=>
string(22) "12.4 毫欧 @ 10A，8V"
["bt_id_vgs_zdz"]=>
string(13) "1.4V @ 250µA"
["bt_vgs_sjdh"]=>
string(13) "15.2nC @ 4.5V"
["bt_vds_srdr"]=>
string(12) "2390pF @ 10V"
["gn_zdz"]=>
string(4) "2.5W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-POWERVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3X3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "85312E"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3X3.3）
外壳：8-POWERVDFN
描述：
MOSFET 2N-CH 20V 39A 8VSON
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 489 ) LIMIT 1
Fet类型：2 N 沟道（双）共源
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：20V
电流-连续漏极(id)：39A
最大功率值：2.5W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD85312Q3E' ) LIMIT 1
供应商:
|
array(71) {
["id"]=>
string(4) "1614"
["pdf_add"]=>
string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87334q3d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg"
["images"]=>
string(97) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/17/296%3B8VSON-1.05-3.3x3.3%3BDPB%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "CSD87334Q3D-ND"
["zzsbh"]=>
string(11) "CSD87334Q3D"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.489880"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET 2N-CH 30V 20A 8SON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(31) "2 N 沟道（双）非对称型"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(3) "20A"
["bt_id_vgs_rds"]=>
string(19) "6 毫欧 @ 12A，8V"
["bt_id_vgs_zdz"]=>
string(13) "1.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "8.3nC @ 4.5V"
["bt_vds_srdr"]=>
string(12) "1260pF @ 15V"
["gn_zdz"]=>
string(2) "6W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-POWERTDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3X3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "87334D"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述：
MOSFET 2N-CH 30V 20A 8SON
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1614 ) LIMIT 1
Fet类型：2 N 沟道（双）非对称型
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A
最大功率值：6W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87334Q3D' ) LIMIT 1
供应商:
|
array(74) {
["id"]=>
string(5) "39697"
["pdf_add"]=>
string(47) "http://www.ti.com/lit/ds/symlink/csd19537q3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg"
["images"]=>
string(101) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-44351-2-ND"
["zzsbh"]=>
string(10) "CSD19537Q3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(5) "10000"
["dj"]=>
string(8) "2.558000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 100V 50A 8VSON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(19) "9.7A (Ta), 50A (Tc)"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(23) "14.5 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.6V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "21nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1680pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），83W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(8) "CSD19537"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 100V 50A 8VSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 39697 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：9.7A (Ta), 50A (Tc)
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），83W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD19537Q3' ) LIMIT 1
供应商:
|
array(74) {
["id"]=>
string(5) "23516"
["pdf_add"]=>
string(47) "http://www.ti.com/lit/ds/symlink/csd25404q3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN%20(3.3x3.3).jpg"
["images"]=>
string(95) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-PowerTDFN_(3.3x3.3).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-43210-2-ND"
["zzsbh"]=>
string(11) "CSD25404Q3T"
["zddgs"]=>
string(3) "250"
["xysl"]=>
string(4) "1250"
["cfkc"]=>
string(4) "1000"
["dj"]=>
string(8) "2.909000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET P-CH 20V 104A 8VSON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(12) "104A（Tc）"
["qddy"]=>
string(11) "1.8V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "6.5 毫欧 @ 10A，4.5V"
["bt_id_vgs_zdz"]=>
string(14) "1.15V @ 250µA"
["bt_vgs_sjdh"]=>
string(13) "14.1nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "2120pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），96W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "250"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(8) "CSD25404"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET P-CH 20V 104A 8VSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23516 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：104A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.8W（Ta），96W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
250个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD25404Q3T' ) LIMIT 1
供应商:
|
array(71) {
["id"]=>
string(3) "360"
["pdf_add"]=>
string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87312q3e"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-3.3X3.3%7EDPB%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-35526-2-ND"
["zzsbh"]=>
string(11) "CSD87312Q3E"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(4) "2500"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.116740"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET 2N-CH 30V 27A 8VSON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(25) "2 N 沟道（双）共源"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(3) "27A"
["bt_id_vgs_rds"]=>
string(19) "33 毫欧 @ 7A，8V"
["bt_id_vgs_zdz"]=>
string(13) "1.3V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "8.2nC @ 4.5V"
["bt_vds_srdr"]=>
string(12) "1250pF @ 15V"
["gn_zdz"]=>
string(4) "2.5W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-POWERTDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3X3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "87312E"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述：
MOSFET 2N-CH 30V 27A 8VSON
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 360 ) LIMIT 1
Fet类型：2 N 沟道（双）共源
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：27A
最大功率值：2.5W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87312Q3E' ) LIMIT 1
供应商:
|
array(71) {
["id"]=>
string(4) "3776"
["pdf_add"]=>
string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86336q3d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(60) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8SON.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(11) "CSD86336Q3D"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.158000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "25V POWERBLOCK N CH MOSFET"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(26) "2 个 N 通道（半桥）"
["fetgn"]=>
string(30) "逻辑电平栅极，5V 驱动"
["ldjdy"]=>
string(3) "25V"
["dl_lxlj"]=>
string(11) "20A（Ta）"
["bt_id_vgs_rds"]=>
string(45) "9.1 毫欧 @ 20A，5V，3.4 毫欧 @ 20A，5V"
["bt_id_vgs_zdz"]=>
string(29) "1.9V @ 250µA，1.6V @ 250µA"
["bt_vgs_sjdh"]=>
string(25) "3.8nC @ 45V，7.4nC @ 45V"
["bt_vds_srdr"]=>
string(29) "494pF @ 12.5V，970pF @ 12.5V"
["gn_zdz"]=>
string(2) "6W"
["gzwd"]=>
string(15) "-55°C ~ 125°C"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "86336D"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1597906637"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerTDFN
描述：
25V POWERBLOCK N CH MOSFET
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3776 ) LIMIT 1
Fet类型：2 个 N 通道（半桥）
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：25V
电流-连续漏极(id)：20A（Ta）
最大功率值：6W
工作温度：-55°C ~ 125°C
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD86336Q3D' ) LIMIT 1
供应商:
|
array(74) {
["id"]=>
string(5) "45516"
["pdf_add"]=>
string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18543q3a"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(76) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-PowerTDFN(3.3x3.3).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "CSD18543Q3AT"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.363000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "60V N-CHANNEL NEXFET POWER MOSF"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(25) "12A（Ta），60A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "15.6 毫欧 @ 12A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "2.7V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "14.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1150pF @ 30V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(11) "66W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "250"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(5) "18543"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591723"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述：
60V N-CHANNEL NEXFET POWER MOSF
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45516 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：12A（Ta），60A（Tc）
Vgs(最大值)：±20V
功率-最大值：66W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
250个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD18543Q3AT' ) LIMIT 1
供应商:
|
array(74) {
["id"]=>
string(5) "33229"
["pdf_add"]=>
string(47) "http://www.ti.com/lit/ds/symlink/csd19537q3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg"
["images"]=>
string(101) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/296;8VSONP-.90-3x3.15;DNH;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-42632-2-ND"
["zzsbh"]=>
string(11) "CSD19537Q3T"
["zddgs"]=>
string(3) "250"
["xysl"]=>
string(3) "750"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.377000"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 100V 50A 8VSON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(11) "50A（Ta）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(23) "14.5 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.6V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "21nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1680pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），83W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "250"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(8) "CSD19537"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 100V 50A 8VSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33229 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：50A（Ta）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），83W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
250个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD19537Q3T' ) LIMIT 1
供应商:
|
array(71) {
["id"]=>
string(4) "1020"
["pdf_add"]=>
string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87333q3d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg"
["images"]=>
string(97) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/17/296%3B8VSON-1.05-3.3x3.3%3BDPB%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-37794-2-ND"
["zzsbh"]=>
string(12) "CSD87333Q3DT"
["zddgs"]=>
string(3) "250"
["xysl"]=>
string(3) "500"
["cfkc"]=>
string(5) "10000"
["dj"]=>
string(8) "6.123360"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET 2N-CH 30V 15A 8VSON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(31) "2 N 沟道（双）非对称型"
["fetgn"]=>
string(30) "逻辑电平栅极，5V 驱动"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(3) "15A"
["bt_id_vgs_rds"]=>
string(21) "14.3 毫欧 @ 4A，8V"
["bt_id_vgs_zdz"]=>
string(13) "1.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "4.6nC @ 4.5V"
["bt_vds_srdr"]=>
string(11) "662pF @ 15V"
["gn_zdz"]=>
string(2) "6W"
["gzwd"]=>
string(14) "125°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-POWERTDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3X3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "250"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "87333D"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述：
MOSFET 2N-CH 30V 15A 8VSON
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1020 ) LIMIT 1
Fet类型：2 N 沟道（双）非对称型
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A
最大功率值：6W
工作温度：125°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
250个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87333Q3DT' ) LIMIT 1
供应商:
|
array(71) {
["id"]=>
string(4) "3193"
["pdf_add"]=>
string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87503q3e"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(47) "https://www.makuwang.com/Public/Mark/img/mk.png"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/804/296%3B-4223409%3B-Q3%3B-8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "CSD87503Q3ET"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.410800"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "30-V DUAL N-CHANNEL MOSFET, COMM"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(25) "2 N 沟道（双）共源"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["bt_id_vgs_rds"]=>
string(1) "-"
["bt_id_vgs_zdz"]=>
string(13) "2.1V @ 250µA"
["bt_vgs_sjdh"]=>
string(13) "17.4nC @ 4.5V"
["bt_vds_srdr"]=>
string(12) "1020pF @ 15V"
["gn_zdz"]=>
string(5) "15.6W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-POWERVDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3X3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "250"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "87503E"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1515398495"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3X3.3）
外壳：8-POWERVDFN
描述：
30-V DUAL N-CHANNEL MOSFET, COMM
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3193 ) LIMIT 1
Fet类型：2 N 沟道（双）共源
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
最大功率值：15.6W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
250个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87503Q3ET' ) LIMIT 1
供应商:
|
array(71) {
["id"]=>
string(4) "1130"
["pdf_add"]=>
string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87334q3d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(84) "//media.digikey.com/Renders/Texas%20Instr%20Renders/296;8VSON-1.05-3.3x3.3;DPB;8.jpg"
["images"]=>
string(97) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/17/296%3B8VSON-1.05-3.3x3.3%3BDPB%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "296-42468-2-ND"
["zzsbh"]=>
string(12) "CSD87334Q3DT"
["zddgs"]=>
string(3) "250"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.579120"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET 2N-CH 30V 20A 8SON"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(31) "2 N 沟道（双）非对称型"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(1) "-"
["bt_id_vgs_rds"]=>
string(19) "6 毫欧 @ 12A，8V"
["bt_id_vgs_zdz"]=>
string(13) "1.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "8.3nC @ 4.5V"
["bt_vds_srdr"]=>
string(12) "1260pF @ 15V"
["gn_zdz"]=>
string(2) "6W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-POWERTDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3X3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "250"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "87334D"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3X3.3）
外壳：8-POWERTDFN
描述：
MOSFET 2N-CH 30V 20A 8SON
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1130 ) LIMIT 1
Fet类型：2 N 沟道（双）非对称型
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：-
最大功率值：6W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
250个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD87334Q3DT' ) LIMIT 1
供应商:
|
array(71) {
["id"]=>
string(4) "3669"
["pdf_add"]=>
string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86336q3d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(68) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/366/8SON.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "CSD86336Q3DT"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.770600"
["gys_id"]=>
string(3) "249"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "SYNCHRONOUS BUCK NEXFET POWER BL"
["xl"]=>
string(9) "NexFET™"
["zzs"]=>
string(15) "TI/德州仪器"
["zzs_new"]=>
string(15) "TI/德州仪器"
["zzs_old"]=>
string(17) "Texas Instruments"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(26) "2 个 N 通道（半桥）"
["fetgn"]=>
string(30) "逻辑电平栅极，5V 驱动"
["ldjdy"]=>
string(3) "25V"
["dl_lxlj"]=>
string(11) "20A（Ta）"
["bt_id_vgs_rds"]=>
string(45) "9.1 毫欧 @ 20A，5V，3.4 毫欧 @ 20A，5V"
["bt_id_vgs_zdz"]=>
string(29) "1.9V @ 250µA，1.6V @ 250µA"
["bt_vgs_sjdh"]=>
string(25) "3.8nC @ 45V，7.4nC @ 45V"
["bt_vds_srdr"]=>
string(29) "494pF @ 12.5V，970pF @ 12.5V"
["gn_zdz"]=>
string(2) "6W"
["gzwd"]=>
string(15) "-55°C ~ 125°C"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(19) "8-VSON（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "250"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(6) "86336D"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1597906335"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：8-VSON（3.3x3.3）
外壳：8-PowerTDFN
描述：
SYNCHRONOUS BUCK NEXFET POWER BL
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3669 ) LIMIT 1
Fet类型：2 个 N 通道（半桥）
Fet功能：逻辑电平栅极，5V 驱动
漏源极电压(vdss)：25V
电流-连续漏极(id)：20A（Ta）
最大功率值：6W
工作温度：-55°C ~ 125°C
|
|
10+:
￥13.31
1000+:
￥10.24
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
250个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CSD86336Q3DT' ) LIMIT 1
供应商:
|
.jpg)
