array(71) {
["id"]=>
string(4) "3135"
["pdf_add"]=>
string(79) "https://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2108_datasheet.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg"
["images"]=>
string(96) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6347/917%7E9BGA-.82-1.35X1.35%7E%7E9.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(7) "EPC2108"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.098720"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "GANFET 3 N-CH 60V/100V 9BGA"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(37) "3 N 沟道（半桥 + 同步自举）"
["fetgn"]=>
string(21) "GaNFET（氮化镓）"
["ldjdy"]=>
string(10) "60V，100V"
["dl_lxlj"]=>
string(12) "1.7A，500mA"
["bt_id_vgs_rds"]=>
string(47) "190 毫欧 @ 2.5A，5V，3.3 欧姆 @ 2.5A，5V"
["bt_id_vgs_zdz"]=>
string(28) "2.5V @ 100µA，2.5V @ 20µA"
["bt_vgs_sjdh"]=>
string(26) "0.22nC @ 5V，0.044nC @ 5V"
["bt_vds_srdr"]=>
string(22) "22pF @ 30V，7pF @ 30V"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(7) "9-VFBGA"
["gysqjfz"]=>
string(17) "9-BGA (1.35X1.35)"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "9"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1515398065"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：9-BGA (1.35X1.35)
外壳：9-VFBGA
描述：
GANFET 3 N-CH 60V/100V 9BGA
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3135 ) LIMIT 1
Fet类型：3 N 沟道（半桥 + 同步自举）
Fet功能：GaNFET（氮化镓）
漏源极电压(vdss)：60V，100V
电流-连续漏极(id)：1.7A，500mA
最大功率值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2108' ) LIMIT 1
|
array(71) {
["id"]=>
string(4) "3136"
["pdf_add"]=>
string(79) "https://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2107_datasheet.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg"
["images"]=>
string(96) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6347/917%7E9BGA-.82-1.35X1.35%7E%7E9.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(7) "EPC2107"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.029040"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(23) "GANFET 3 N-CH 100V 9BGA"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(37) "3 N 沟道（半桥 + 同步自举）"
["fetgn"]=>
string(21) "GaNFET（氮化镓）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(12) "1.7A，500mA"
["bt_id_vgs_rds"]=>
string(43) "320 毫欧 @ 2A，5V，3.3 欧姆 @ 2A，5V"
["bt_id_vgs_zdz"]=>
string(28) "2.5V @ 100µA，2.5V @ 20µA"
["bt_vgs_sjdh"]=>
string(26) "0.16nC @ 5V，0.044nC @ 5V"
["bt_vds_srdr"]=>
string(22) "16pF @ 50V，7pF @ 50V"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(7) "9-VFBGA"
["gysqjfz"]=>
string(17) "9-BGA (1.35X1.35)"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "9"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1515398065"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：9-BGA (1.35X1.35)
外壳：9-VFBGA
描述：
GANFET 3 N-CH 100V 9BGA
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3136 ) LIMIT 1
Fet类型：3 N 沟道（半桥 + 同步自举）
Fet功能：GaNFET（氮化镓）
漏源极电压(vdss)：100V
电流-连续漏极(id)：1.7A，500mA
最大功率值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2107' ) LIMIT 1
|
