封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(72) { ["id"]=> string(4) "2157" ["pdf_add"]=> string(55) "http://www.fairchildsemi.com/datasheets/FQ/FQI27N25.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(13) "FQI27N25TU-ND" ["zzsbh"]=> string(10) "FQI27N25TU" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 250V 25.5A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "250V" ["dl_lxlj"]=> string(13) "25.5A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(25) "110 毫欧 @ 12.75A,10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "65nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "2450pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "3.13W(Ta),180W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI27N25TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 250V 25.5A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2157 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):250V
电流-连续漏极(id):25.5A(Tc)
Vgs(最大值):±30V
功率-最大值:3.13W(Ta),180W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10392157
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI27N25TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10804" ["pdf_add"]=> string(71) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB,FQI4N20L.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(13) "FQI4N20LTU-ND" ["zzsbh"]=> string(10) "FQI4N20LTU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 200V 3.8A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "3.8A(Tc)" ["qddy"]=> string(8) "5V,10V" ["bt_id_vgs_rds"]=> string(24) "1.35 欧姆 @ 1.9A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "5.2nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "310pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),45W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI4N20LTU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 200V 3.8A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10804 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):200V
电流-连续漏极(id):3.8A(Tc)
Vgs(最大值):±20V
功率-最大值:3.13W(Ta),45W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910804
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI4N20LTU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10805" ["pdf_add"]=> string(66) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB4N20.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI4N20TU-ND" ["zzsbh"]=> string(9) "FQI4N20TU" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 200V 3.6A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "3.6A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "1.4 欧姆 @ 1.8A,10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "6.5nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "220pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),45W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI4N20TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 200V 3.6A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10805 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):200V
电流-连续漏极(id):3.6A(Tc)
Vgs(最大值):±30V
功率-最大值:3.13W(Ta),45W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910805
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI4N20TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10810" ["pdf_add"]=> string(73) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB,%20FQI3N25.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI3N25TU-ND" ["zzsbh"]=> string(9) "FQI3N25TU" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 250V 2.8A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "250V" ["dl_lxlj"]=> string(12) "2.8A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "2.2 欧姆 @ 1.4A,10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "5.2nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "170pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),45W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI3N25TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 250V 2.8A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10810 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):250V
电流-连续漏极(id):2.8A(Tc)
Vgs(最大值):±30V
功率-最大值:3.13W(Ta),45W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910810
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI3N25TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10811" ["pdf_add"]=> string(77) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB5P10,%20FQI5P10.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI5P10TU-ND" ["zzsbh"]=> string(9) "FQI5P10TU" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 100V 4.5A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "4.5A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(25) "1.05 欧姆 @ 2.25A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "8.2nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "250pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),40W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI5P10TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET P-CH 100V 4.5A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10811 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):100V
电流-连续漏极(id):4.5A(Tc)
Vgs(最大值):±30V
功率-最大值:3.75W(Ta),40W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910811
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI5P10TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10815" ["pdf_add"]=> string(77) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB7N10,%20FQI7N10.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI7N10TU-ND" ["zzsbh"]=> string(9) "FQI7N10TU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 100V 7.3A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "7.3A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "350 毫欧 @ 3.65A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "7.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(11) "250pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),40W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI7N10TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 100V 7.3A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10815 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):100V
电流-连续漏极(id):7.3A(Tc)
Vgs(最大值):±25V
功率-最大值:3.75W(Ta),40W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910815
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI7N10TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10819" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB5N20L.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(13) "FQI5N20LTU-ND" ["zzsbh"]=> string(10) "FQI5N20LTU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 200V 4.5A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "4.5A(Tc)" ["qddy"]=> string(8) "5V,10V" ["bt_id_vgs_rds"]=> string(24) "1.2 欧姆 @ 2.25A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "6.2nC @ 5V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(11) "325pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),52W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI5N20LTU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 200V 4.5A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10819 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):200V
电流-连续漏极(id):4.5A(Tc)
Vgs(最大值):±25V
功率-最大值:3.13W(Ta),52W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910819
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI5N20LTU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10820" ["pdf_add"]=> string(79) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB7N10L,%20FQI7N10L.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(13) "FQI7N10LTU-ND" ["zzsbh"]=> string(10) "FQI7N10LTU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 100V 7.3A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "7.3A(Tc)" ["qddy"]=> string(8) "5V,10V" ["bt_id_vgs_rds"]=> string(24) "350 毫欧 @ 3.65A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(8) "6nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "290pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),40W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI7N10LTU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 100V 7.3A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10820 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):100V
电流-连续漏极(id):7.3A(Tc)
Vgs(最大值):±20V
功率-最大值:3.75W(Ta),40W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910820
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI7N10LTU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10825" ["pdf_add"]=> string(77) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB5N15,%20FQI5N15.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI5N15TU-ND" ["zzsbh"]=> string(9) "FQI5N15TU" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 150V 5.4A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(12) "5.4A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "800 毫欧 @ 2.7A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "7nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(11) "230pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),54W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI5N15TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 150V 5.4A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10825 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):150V
电流-连续漏极(id):5.4A(Tc)
Vgs(最大值):±25V
功率-最大值:3.75W(Ta),54W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910825
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI5N15TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10826" ["pdf_add"]=> string(81) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB13N06L,%20FQI13N06L.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(14) "FQI13N06LTU-ND" ["zzsbh"]=> string(11) "FQI13N06LTU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 13.6A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(13) "13.6A(Tc)" ["qddy"]=> string(8) "5V,10V" ["bt_id_vgs_rds"]=> string(23) "110 毫欧 @ 6.8A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "6.4nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "350pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),45W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI13N06LTU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 60V 13.6A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10826 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):60V
电流-连续漏极(id):13.6A(Tc)
Vgs(最大值):±20V
功率-最大值:3.75W(Ta),45W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910826
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI13N06LTU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10827" ["pdf_add"]=> string(70) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB,FQI5N20.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI5N20TU-ND" ["zzsbh"]=> string(9) "FQI5N20TU" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 200V 4.5A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "4.5A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "1.2 欧姆 @ 2.25A,10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "7.5nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "270pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),52W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI5N20TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 200V 4.5A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10827 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):200V
电流-连续漏极(id):4.5A(Tc)
Vgs(最大值):±30V
功率-最大值:3.13W(Ta),52W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910827
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI5N20TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10828" ["pdf_add"]=> string(66) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB7P06.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI7P06TU-ND" ["zzsbh"]=> string(9) "FQI7P06TU" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET P-CH 60V 7A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(10) "7A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "410 毫欧 @ 3.5A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "8.2nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(11) "295pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),45W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI7P06TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET P-CH 60V 7A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10828 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):60V
电流-连续漏极(id):7A(Tc)
Vgs(最大值):±25V
功率-最大值:3.75W(Ta),45W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910828
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI7P06TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10829" ["pdf_add"]=> string(70) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB,FQI4N25.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI4N25TU-ND" ["zzsbh"]=> string(9) "FQI4N25TU" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 250V 3.6A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "250V" ["dl_lxlj"]=> string(12) "3.6A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "1.75 欧姆 @ 1.8A,10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "5.6nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "200pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),52W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI4N25TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 250V 3.6A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10829 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):250V
电流-连续漏极(id):3.6A(Tc)
Vgs(最大值):±30V
功率-最大值:3.13W(Ta),52W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910829
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI4N25TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10834" ["pdf_add"]=> string(77) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB2P25,%20FQI2P25.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI2P25TU-ND" ["zzsbh"]=> string(9) "FQI2P25TU" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 250V 2.3A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "250V" ["dl_lxlj"]=> string(12) "2.3A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "4 欧姆 @ 1.15A,10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "8.5nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "250pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),52W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI2P25TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET P-CH 250V 2.3A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10834 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):250V
电流-连续漏极(id):2.3A(Tc)
Vgs(最大值):±30V
功率-最大值:3.13W(Ta),52W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910834
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI2P25TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10837" ["pdf_add"]=> string(77) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB2N30,%20FQI2N30.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI2N30TU-ND" ["zzsbh"]=> string(9) "FQI2N30TU" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 300V 2.1A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "300V" ["dl_lxlj"]=> string(12) "2.1A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "3.7 欧姆 @ 1.05A,10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "5nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "130pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),40W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI2N30TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 300V 2.1A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10837 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):300V
电流-连续漏极(id):2.1A(Tc)
Vgs(最大值):±30V
功率-最大值:3.13W(Ta),40W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910837
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI2N30TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10839" ["pdf_add"]=> string(66) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB3P20.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI3P20TU-ND" ["zzsbh"]=> string(9) "FQI3P20TU" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 200V 2.8A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "2.8A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "2.7 欧姆 @ 1.4A,10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "8nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "250pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W(Ta),52W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI3P20TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET P-CH 200V 2.8A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10839 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):200V
电流-连续漏极(id):2.8A(Tc)
Vgs(最大值):±30V
功率-最大值:3.13W(Ta),52W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910839
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI3P20TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10852" ["pdf_add"]=> string(77) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB6N15,%20FQI6N15.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI6N15TU-ND" ["zzsbh"]=> string(9) "FQI6N15TU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 150V 6.4A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(12) "6.4A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "600 毫欧 @ 3.2A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "8.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(11) "270pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),63W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI6N15TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 150V 6.4A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10852 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):150V
电流-连续漏极(id):6.4A(Tc)
Vgs(最大值):±25V
功率-最大值:3.75W(Ta),63W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910852
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI6N15TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10865" ["pdf_add"]=> string(71) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB,FQI9N08L.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(13) "FQI9N08LTU-ND" ["zzsbh"]=> string(10) "FQI9N08LTU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 80V 9.3A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "9.3A(Tc)" ["qddy"]=> string(8) "5V,10V" ["bt_id_vgs_rds"]=> string(24) "210 毫欧 @ 4.65A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "6.1nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "280pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),40W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI9N08LTU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 80V 9.3A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10865 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):80V
电流-连续漏极(id):9.3A(Tc)
Vgs(最大值):±20V
功率-最大值:3.75W(Ta),40W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910865
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI9N08LTU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10869" ["pdf_add"]=> string(77) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB9N08,%20FQI9N08.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI9N08TU-ND" ["zzsbh"]=> string(9) "FQI9N08TU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 80V 9.3A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "9.3A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "210 毫欧 @ 4.65A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "7.7nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(11) "250pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.75W(Ta),40W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FQI9N08TU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 80V 9.3A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10869 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):80V
电流-连续漏极(id):9.3A(Tc)
Vgs(最大值):±25V
功率-最大值:3.75W(Ta),40W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103910869
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI9N08TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "10870" ["pdf_add"]=> string(72) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/IRLW,%20I610A.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(13) "IRLI610ATU-ND" ["zzsbh"]=> string(10) "IRLI610ATU" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 200V 3.3A I2PAK" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "3.3A(Tc)" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(23) "1.5 欧姆 @ 1.65A,5V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(8) "9nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "240pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.1W(Ta),33W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3,长引线,I²Pak,TO-262AA" ["gysqjfz"]=> string(17) "I2PAK(TO-262)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IRLI610ATU复制
状态: 在售 修改
品牌: ONSEMI/安森美复制
封装:I2PAK(TO-262)
外壳:TO-262-3,长引线,I²Pak,TO-262AA
描述: MOSFET N-CH 200V 3.3A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10870 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):200V
电流-连续漏极(id):3.3A(Tc)
Vgs(最大值):±20V
功率-最大值:3.1W(Ta),33W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103910870
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLI610ATU' ) LIMIT 1

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