array(74) {
["id"]=>
string(5) "46039"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/77698/sidr870adp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "SIDR870ADP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(25) "MOSFET N-CH 100V 95A SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(11) "95A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "6.6 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "80nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2866pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593820"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
.jpg)
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CH 100V 95A SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46039 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：95A（Tc）
Vgs(最大值)：±20V
功率-最大值：125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR870ADP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46054"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/77086/sidr608dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR608DP-T1-RE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.509150"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(23) "MOSFET N-CH 45V PP SO-8"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "45V"
["dl_lxlj"]=>
string(26) "51A（Ta），208A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.2 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "167nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "8900pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），104W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593880"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CH 45V PP SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46054 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：45V
电流-连续漏极(id)：51A（Ta），208A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR608DP-T1-RE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46055"
["pdf_add"]=>
string(47) "http://www.vishay.com/docs/77245/sidr668adp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "SIDR668ADP-T1-RE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(26) "MOSFET N-CH 100V PPAK SO-8"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(28) "23.3A（Ta），104A（Tc）"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "81nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3750pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593891"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CH 100V PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46055 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：23.3A（Ta），104A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR668ADP-T1-RE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46058"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/77314/sidr680adp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "SIDR680ADP-T1-RE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "11.102380"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(27) "N-CHANNEL 80-V (D-S) MOSFET"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(28) "30.7A（Ta），137A（Tc）"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "2.88 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "83nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "4415pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593892"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
N-CHANNEL 80-V (D-S) MOSFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46058 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：30.7A（Ta），137A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥16.60
3000+:
￥12.71
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR680ADP-T1-RE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46062"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/76606/sidr104adp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "SIDR104ADP-T1-RE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.543250"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(32) "N-CHANNEL 100 V (D-S) MOSFET POW"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(27) "18.8A（Ta），81A（Tc）"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "6.1 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "70nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3250pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "5.4W（Ta），100W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593904"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
N-CHANNEL 100 V (D-S) MOSFET POW
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46062 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：18.8A（Ta），81A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.4W（Ta），100W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR104ADP-T1-RE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46065"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/77513/sidr170dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR170DP-T1-RE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.618690"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(32) "N-CHANNEL 100 V (D-S) MOSFET POW"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(21) "23.2A (Ta)，95A (Tc)"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "140nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "6195pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593915"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
N-CHANNEL 100 V (D-S) MOSFET POW
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46065 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：23.2A (Ta)，95A (Tc)
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR170DP-T1-RE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46068"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/76351/sidr392dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR392DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "9.070390"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(17) "MOSFET N-CHAN 30V"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(26) "82A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "0.62 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "188nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "9530pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593928"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CHAN 30V
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46068 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：82A（Ta），100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥13.56
3000+:
￥10.39
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR392DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46073"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75748/sidr626dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR626DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(17) "MOSFET N-CHAN 60V"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(28) "42.8A（Ta），100A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.7 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "102nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5130pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593939"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CHAN 60V
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46073 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：42.8A（Ta），100A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR626DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46074"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75754/sidr680dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(83) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;-6048;-;-8(bottom).jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR680DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(15) "MOSFET N-CH 80V"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(22) "32.8A (Ta)，100A (Tc)"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.9 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "105nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5150pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593951"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CH 80V
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46074 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：32.8A (Ta)，100A (Tc)
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR680DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46075"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75751/sidr668dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR668DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "9.768130"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(16) "MOSFET N-CH 100V"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(21) "23.2A (Ta)，95A (Tc)"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "108nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5400pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593951"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CH 100V
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46075 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：23.2A (Ta)，95A (Tc)
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥14.60
3000+:
￥11.18
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR668DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46076"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75951/sidr622dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR622DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "10.186750"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(18) "MOSFET N-CHAN 150V"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "150V"
["dl_lxlj"]=>
string(29) "64.6A（Ta），56.7A（Tc）"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "17.7 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "41nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1516pF @ 75V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593963"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CHAN 150V
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46076 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：64.6A（Ta），56.7A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥15.23
3000+:
￥11.66
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR622DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46084"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75649/sidr610dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR610DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(30) "MOSFET N-CHAN 200V PPAK SO-8DC"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "200V"
["dl_lxlj"]=>
string(22) "8.9A (Ta)，39.6A (Tc)"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "31.9 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "38nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "1380pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607594012"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CHAN 200V PPAK SO-8DC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46084 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：8.9A (Ta)，39.6A (Tc)
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR610DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47503"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75312/sidr638dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR638DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.935890"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(25) "MOSFET N-CH 40V 100A SO-8"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "0.88 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "204nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(13) "10500pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607926723"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CH 40V 100A SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47503 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR638DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47553"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/76239/sidr140dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR140DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.671200"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(29) "MOSFET N-CHAN 25V PPAK SO-8DC"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "25V"
["dl_lxlj"]=>
string(20) "79A (Ta)，100A (Tc)"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "0.67 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.1V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "170nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "8150pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607926965"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CHAN 25V PPAK SO-8DC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47553 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：79A (Ta)，100A (Tc)
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR140DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47555"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75636/sidr390dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR390DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.303440"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(32) "MOSFET N-CHAN 30V POWERPAK SO-8D"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(28) "69.9A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "0.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "153nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(13) "10180pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607926967"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CHAN 30V POWERPAK SO-8D
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47555 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：69.9A（Ta），100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR390DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "48531"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75636/sidr390dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR390DP-T1-RE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.635230"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(31) "MOSFET N-CH 30V POWERPAK SO-8DC"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(28) "69.9A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "0.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "153nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(13) "10180pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607930870"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CH 30V POWERPAK SO-8DC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48531 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：69.9A（Ta），100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR390DP-T1-RE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "48571"
["pdf_add"]=>
string(1) "-"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "SIDR626LDP-T1-RE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(32) "N-CHANNEL 60 V (D-S) MOSFET POWE"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(28) "45.6A（Ta），2.4A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.5 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "135nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5900pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607931043"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
N-CHANNEL 60 V (D-S) MOSFET POWE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48571 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：45.6A（Ta），2.4A（Tc）
Vgs(最大值)：±20V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR626LDP-T1-RE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "49995"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75606/sidr402dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR402DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.512210"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(26) "MOSFET N-CHAN 40V PPSO-8DC"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(28) "64.6A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "0.88 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "165nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "9100pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607934535"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
MOSFET N-CHAN 40V PPSO-8DC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49995 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：64.6A（Ta），100A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR402DP-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "50009"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75639/sidr220dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6048%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SIDR220DP-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "9.349510"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736998004"
["ms"]=>
string(27) "N-CHANNEL 25-V (D-S) MOSFET"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "25V"
["dl_lxlj"]=>
string(28) "87.7A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "5.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.1V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "200nC @ 10V"
["vgs_zdz"]=>
string(11) "+16V，-12V"
["bt_vds_srdr"]=>
string(12) "1085pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "6.25W（Ta），125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(15) "PowerPAK® SO-8"
["gysqjfz"]=>
string(17) "PowerPAK® SO-8DC"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607934558"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® SO-8DC
外壳：PowerPAK® SO-8
描述：
N-CHANNEL 25-V (D-S) MOSFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50009 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：87.7A（Ta），100A（Tc）
Vgs(最大值)：+16V，-12V
功率-最大值：6.25W（Ta），125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥13.98
3000+:
￥10.71
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIDR220DP-T1-GE3' ) LIMIT 1
|
.jpg)
