封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(74) { ["id"]=> string(3) "289" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/68741/si2301cd.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "SI2301CDS-T1-GE3TR-ND" ["zzsbh"]=> string(16) "SI2301CDS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "42000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.266564" ["gys_id"]=> string(3) "291" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 20V 3.1A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "3.1A(Tc)" ["qddy"]=> string(11) "2.5V,4.5V" ["bt_id_vgs_rds"]=> string(24) "112 毫欧 @ 2.8A,4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "10nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "405pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "860mW(Ta),1.6W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "N1***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "热销" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "2" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2301CDS-T1-GE3复制
状态: 热销 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 20V 3.1A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 289 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):20V
电流-连续漏极(id):3.1A(Tc)
Vgs(最大值):±8V
功率-最大值:860mW(Ta),1.6W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039289
10+: 0.40
批量价: 0.31
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2301CDS-T1-GE3' ) LIMIT 1
供应商:
库存:38K+
array(74) { ["id"]=> string(5) "18532" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/70833/70833.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SI2305DS-T1-E3CT-ND" ["zzsbh"]=> string(14) "SI2305DS-T1-E3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.500000" ["gys_id"]=> string(3) "348" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 8V 3.5A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET P 通道,金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(2) "8V" ["dl_lxlj"]=> string(12) "3.5A(Ta)" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "52 毫欧 @ 3.5A,4.5V" ["bt_id_vgs_zdz"]=> string(14) "800mV @ 250µA" ["bt_vgs_sjdh"]=> string(11) "15nC @ 4.5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "1245pF @ 4V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(5) "1.25W" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(17) "剪切带(CT)" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "A5***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2305DS-T1-E3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 8V 3.5A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 18532 ) LIMIT 1
Fet类型:MOSFET P 通道,金属氧化物
漏源极电压(vdss):8V
电流-连续漏极(id):3.5A(Ta)
Vgs(最大值):
功率-最大值:1.25W
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103918532
10+: 0.75
批量价: 0.57
起订量:10 修改
包装量: 剪切带(CT) 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2305DS-T1-E3' ) LIMIT 1
供应商:
库存:15
array(74) { ["id"]=> string(3) "136" ["pdf_add"]=> string(72) "https://www.vishay.com/images/product-images/pt-large/71333-pt-large.jpg" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(72) "https://www.vishay.com/images/product-images/pt-large/71333-pt-large.jpg" ["images_dir"]=> string(31) "./images/1039/2N7002K-T1-E3.jpg" ["ljbh"]=> string(18) "2N7002K-T1-E3TR-ND" ["zzsbh"]=> string(13) "2N7002K-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(6) "351000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1705991975" ["ms"]=> string(28) "MOSFET N-CH 60V 300MA SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(13) "300mA(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "2 欧姆 @ 500mA,10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) ".6nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(10) "30pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "350mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "7K***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "1" ["gl_gnd"]=> string(1) "3" ["gl_jz"]=> string(1) "2" ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "2" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: 2N7002K-T1-E3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 60V 300MA SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 136 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):60V
电流-连续漏极(id):300mA(Ta)
Vgs(最大值):±20V
功率-最大值:350mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039136
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '2N7002K-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(3) "298" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/68741/si2301cd.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI2301CDS-T1-E3TR-ND" ["zzsbh"]=> string(15) "SI2301CDS-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "30000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(0) "" ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1544758618" ["ms"]=> string(28) "MOSFET P-CH 20V 3.1A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "3.1A(Tc)" ["qddy"]=> string(11) "2.5V,4.5V" ["bt_id_vgs_rds"]=> string(24) "112 毫欧 @ 2.8A,4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "10nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "405pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "860mW(Ta),1.6W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "N1***" ["gl_dmtp"]=> string(46) "JtgFetMosfetDGlDm/2018-07-12/5b4734357df24.jpg" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(42) "可能出现大小写数字及字母或杠" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "4" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2301CDS-T1-E3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 20V 3.1A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 298 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):20V
电流-连续漏极(id):3.1A(Tc)
Vgs(最大值):±8V
功率-最大值:860mW(Ta),1.6W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039298
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2301CDS-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(3) "322" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/68645/si2302cds.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI2302CDS-T1-E3TR-ND" ["zzsbh"]=> string(15) "SI2302CDS-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "81000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 20V 2.6A SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "2.6A(Ta)" ["qddy"]=> string(11) "2.5V,4.5V" ["bt_id_vgs_rds"]=> string(23) "57 毫欧 @ 3.6A,4.5V" ["bt_id_vgs_zdz"]=> string(14) "850mV @ 250µA" ["bt_vgs_sjdh"]=> string(12) "5.5nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(4) "±8V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "710mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "N2***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "2" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2302CDS-T1-E3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 20V 2.6A SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 322 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):20V
电流-连续漏极(id):2.6A(Ta)
Vgs(最大值):±8V
功率-最大值:710mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039322
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2302CDS-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(3) "352" ["pdf_add"]=> string(46) "http://www.vishay.com/docs/72066/si2301bds.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI2301BDS-T1-E3TR-ND" ["zzsbh"]=> string(15) "SI2301BDS-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(6) "300000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 20V 2.2A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "2.2A(Ta)" ["qddy"]=> string(11) "2.5V,4.5V" ["bt_id_vgs_rds"]=> string(24) "100 毫欧 @ 2.8A,4.5V" ["bt_id_vgs_zdz"]=> string(14) "950mV @ 250µA" ["bt_vgs_sjdh"]=> string(11) "10nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(10) "375pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "700mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "L1***" ["gl_dmtp"]=> string(46) "JtgFetMosfetDGlDm/2018-07-12/5b4734357df24.jpg" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(42) "可能出现大小写数字及字母或杠" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2301BDS-T1-E3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 20V 2.2A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 352 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):20V
电流-连续漏极(id):2.2A(Ta)
Vgs(最大值):±8V
功率-最大值:700mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039352
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2301BDS-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(3) "367" ["pdf_add"]=> string(44) "http://www.vishay.com/docs/71411/tp0610k.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "TP0610K-T1-E3TR-ND" ["zzsbh"]=> string(13) "TP0610K-T1-E3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "57000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET P-CH 60V 185MA SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(13) "185mA(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "6 欧姆 @ 500mA,10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "1.7nC @ 15V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(10) "23pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "350mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "6K***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "2" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: TP0610K-T1-E3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 60V 185MA SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 367 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):60V
电流-连续漏极(id):185mA(Ta)
Vgs(最大值):±20V
功率-最大值:350mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039367
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TP0610K-T1-E3' ) LIMIT 1
array(74) { ["id"]=> string(3) "490" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/64847/si2305cd.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "SI2305CDS-T1-GE3TR-ND" ["zzsbh"]=> string(16) "SI2305CDS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "33000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 8V 5.8A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(2) "8V" ["dl_lxlj"]=> string(12) "5.8A(Tc)" ["qddy"]=> string(11) "1.8V,4.5V" ["bt_id_vgs_rds"]=> string(23) "35 毫欧 @ 4.4A,4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "30nC @ 8V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(10) "960pF @ 4V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "960mW(Ta),1.7W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "N5***" ["gl_dmtp"]=> string(46) "JtgFetMosfetDGlDm/2018-09-11/5b975a80709ce.JPG" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2305CDS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 8V 5.8A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 490 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):8V
电流-连续漏极(id):5.8A(Tc)
Vgs(最大值):±8V
功率-最大值:960mW(Ta),1.7W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039490
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2305CDS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(3) "496" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/67030/si2318cd.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "SI2318CDS-T1-GE3TR-ND" ["zzsbh"]=> string(16) "SI2318CDS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 40V 5.6A SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "5.6A(Tc)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "42 毫欧 @ 4.3A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "9nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "340pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "1.25W(Ta),2.1W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "P9***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2318CDS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 40V 5.6A SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 496 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):40V
电流-连续漏极(id):5.6A(Tc)
Vgs(最大值):±20V
功率-最大值:1.25W(Ta),2.1W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039496
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2318CDS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7708" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/67509/si2366ds.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI2366DS-T1-GE3-ND" ["zzsbh"]=> string(15) "SI2366DS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 30V 5.8A SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "5.8A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "36 毫欧 @ 4.5A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "10nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "335pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "1.25W(Ta),2.1W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "H6***" ["gl_dmtp"]=> string(46) "JtgFetMosfetDGlDm/2018-08-08/5b6ab2775c56b.jpg" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2366DS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 30V 5.8A SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7708 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):5.8A(Tc)
Vgs(最大值):±20V
功率-最大值:1.25W(Ta),2.1W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10397708
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2366DS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7786" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/67343/si2399ds.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI2399DS-T1-GE3-ND" ["zzsbh"]=> string(15) "SI2399DS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 20V 6A SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(10) "6A(Tc)" ["qddy"]=> string(10) "2.5V,10V" ["bt_id_vgs_rds"]=> string(22) "34 毫欧 @ 5.1A,10V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "20nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(11) "835pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.5W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "O1***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2399DS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 20V 6A SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7786 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):20V
电流-连续漏极(id):6A(Tc)
Vgs(最大值):±12V
功率-最大值:2.5W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10397786
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2399DS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "7830" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72079/72079.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI2343DS-T1-GE3-ND" ["zzsbh"]=> string(15) "SI2343DS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 30V 3.1A SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "3.1A(Ta)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "53 毫欧 @ 4A,10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "21nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "540pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "750mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "F3***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2343DS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 30V 3.1A SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7830 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):3.1A(Ta)
Vgs(最大值):±20V
功率-最大值:750mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10397830
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2343DS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "8087" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/71611/si2314ed.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SI2314EDS-T1-GE3-ND" ["zzsbh"]=> string(16) "SI2314EDS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 20V 3.77A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(13) "3.77A(Ta)" ["qddy"]=> string(11) "1.8V,4.5V" ["bt_id_vgs_rds"]=> string(21) "33 毫欧 @ 5A,4.5V" ["bt_id_vgs_zdz"]=> string(14) "950mV @ 250µA" ["bt_vgs_sjdh"]=> string(11) "14nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(5) "±12V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "750mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "C4***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2314EDS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 20V 3.77A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8087 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):20V
电流-连续漏极(id):3.77A(Ta)
Vgs(最大值):±12V
功率-最大值:750mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10398087
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2314EDS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "8216" ["pdf_add"]=> string(44) "http://www.vishay.com/docs/72225/tn2404k.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "TN2404K-T1-GE3-ND" ["zzsbh"]=> string(14) "TN2404K-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 240V 200MA TO236" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "240V" ["dl_lxlj"]=> string(13) "200mA(Ta)" ["qddy"]=> string(10) "2.5V,10V" ["bt_id_vgs_rds"]=> string(22) "4 欧姆 @ 300mA,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "8nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(5) "±20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "360mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "K1***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: TN2404K-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 240V 200MA TO236
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8216 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):240V
电流-连续漏极(id):200mA(Ta)
Vgs(最大值):±20V
功率-最大值:360mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10398216
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TN2404K-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "8271" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72023/72023.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI2333DS-T1-GE3-ND" ["zzsbh"]=> string(15) "SI2333DS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 12V 4.1A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(12) "4.1A(Ta)" ["qddy"]=> string(11) "1.8V,4.5V" ["bt_id_vgs_rds"]=> string(23) "32 毫欧 @ 5.3A,4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "18nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "1100pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "750mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "E3***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2333DS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 12V 4.1A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8271 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):12V
电流-连续漏极(id):4.1A(Ta)
Vgs(最大值):±8V
功率-最大值:750mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10398271
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2333DS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "8554" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/67691/si2324ds.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI2324DS-T1-GE3-ND" ["zzsbh"]=> string(15) "SI2324DS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 100V 2.3A SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "2.3A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "234 毫欧 @ 1.5A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.9V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "10.4nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "190pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "1.25W(Ta),2.5W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "D4***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2324DS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 100V 2.3A SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8554 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):100V
电流-连续漏极(id):2.3A(Tc)
Vgs(最大值):±20V
功率-最大值:1.25W(Ta),2.5W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10398554
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2324DS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "8570" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72699/72699.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SI2307BDS-T1-GE3-ND" ["zzsbh"]=> string(16) "SI2307BDS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 30V 2.5A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "2.5A(Ta)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "78 毫欧 @ 3.2A,10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "15nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "380pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "750mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "L7***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2307BDS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 30V 2.5A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8570 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):2.5A(Ta)
Vgs(最大值):±20V
功率-最大值:750mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10398570
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2307BDS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "8696" ["pdf_add"]=> string(75) "//media.digikey.com/pdf/Data%20Sheets/Vishay%20Siliconix%20PDFs/SQ7002K.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "SQ7002K-T1-GE3-ND" ["zzsbh"]=> string(14) "SQ7002K-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 60V 320MA SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(13) "320mA(Tc)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(24) "1.3 欧姆 @ 500mA,10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "1.4nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(10) "24pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "500mW(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "8K***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SQ7002K-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 60V 320MA SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8696 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):60V
电流-连续漏极(id):320mA(Tc)
Vgs(最大值):±20V
功率-最大值:500mW(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:10398696
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQ7002K-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "8804" ["pdf_add"]=> string(42) "http://www.vishay.com/docs/72014/72014.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "SI2315BDS-T1-GE3-ND" ["zzsbh"]=> string(16) "SI2315BDS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 12V 3A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(10) "3A(Ta)" ["qddy"]=> string(4) "4.5V" ["bt_id_vgs_rds"]=> string(24) "50 毫欧 @ 3.85A,4.5V" ["bt_id_vgs_zdz"]=> string(14) "900mV @ 250µA" ["bt_vgs_sjdh"]=> string(11) "15nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(10) "715pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "750mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "M5***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2315BDS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 12V 3A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8804 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):12V
电流-连续漏极(id):3A(Ta)
Vgs(最大值):±8V
功率-最大值:750mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10398804
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2315BDS-T1-GE3' ) LIMIT 1
array(74) { ["id"]=> string(4) "8871" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/71798/si2316ds.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(18) "SI2316DS-T1-GE3-ND" ["zzsbh"]=> string(15) "SI2316DS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 2.9A SOT23-3" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "2.9A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "50 毫欧 @ 3.4A,10V" ["bt_id_vgs_zdz"]=> string(26) "800mV @ 250µA(最小)" ["bt_vgs_sjdh"]=> string(9) "7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "215pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "700mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "C6***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2316DS-T1-GE3复制
状态: 在售 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 30V 2.9A SOT23-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8871 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):2.9A(Ta)
Vgs(最大值):±20V
功率-最大值:700mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10398871
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2316DS-T1-GE3' ) LIMIT 1

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