封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(74) { ["id"]=> string(3) "412" ["pdf_add"]=> string(70) "https://www.umw-ic.com/static/pdf/603dcb10b9c48169e5bbaac91b8af6b9.pdf" ["pdf_dir"]=> string(53) "./datasheet/1039/603dcb10b9c48169e5bbaac91b8af6b9.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(80) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6366/MFG_4518_SOT-23.jpg" ["images_dir"]=> string(24) "./images/1039/BSS138.jpg" ["ljbh"]=> string(13) "FDN352APTR-ND" ["zzsbh"]=> string(8) "FDN352AP" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "42000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET P-CH 30V 1.3A SUPERSOT3" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "1.3A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(23) "180 毫欧 @ 1.3A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "1.9nC @ 4.5V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(11) "150pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "500mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(10) "SuperSOT-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(3) "352" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FDN352AP复制
状态: 爆款 修改
品牌: ONSEMI/安森美复制
封装:SuperSOT-3
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 30V 1.3A SUPERSOT3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 412 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):1.3A(Ta)
Vgs(最大值):±25V
功率-最大值:500mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039412
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDN352AP' ) LIMIT 1
供应商:
库存:42K+
array(74) { ["id"]=> string(3) "454" ["pdf_add"]=> string(70) "https://www.umw-ic.com/static/pdf/d1213e5e067e15a5254e9b9e21190443.pdf" ["pdf_dir"]=> string(53) "./datasheet/1039/d1213e5e067e15a5254e9b9e21190443.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(80) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6366/MFG_4518_SOT-23.jpg" ["images_dir"]=> string(24) "./images/1039/BSS138.jpg" ["ljbh"]=> string(12) "FDV305NTR-ND" ["zzsbh"]=> string(7) "FDV305N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.521190" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 20V 900MA SOT23" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(13) "900mA(Ta)" ["qddy"]=> string(11) "2.5V,4.5V" ["bt_id_vgs_rds"]=> string(25) "220 毫欧 @ 900mA,4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "1.5nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(11) "109pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "350mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(6) "SOT-23" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(3) "305" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FDV305N复制
状态: 爆款 修改
品牌: ONSEMI/安森美复制
封装:SOT-23
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 20V 900MA SOT23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 454 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):20V
电流-连续漏极(id):900mA(Ta)
Vgs(最大值):±12V
功率-最大值:350mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039454
10+: 0.78
3000+: 0.60
起订量:10 修改
包装量: 3000个/ 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDV305N' ) LIMIT 1
供应商:
库存:15K+
array(74) { ["id"]=> string(4) "3839" ["pdf_add"]=> string(107) "http://www.infineon.com/dgdl/Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175" ["pdf_dir"]=> string(55) "./datasheet/1039/Infineon-BSC093N15NS5-DS-v02_00-EN.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "BSC093N15NS5ATMA1-ND" ["zzsbh"]=> string(17) "BSC093N15NS5ATMA1" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 150V 87A TDSON-8" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(11) "87A(Tc)" ["qddy"]=> string(8) "8V,10V" ["bt_id_vgs_rds"]=> string(22) "9.3 毫欧 @ 44A,10V" ["bt_id_vgs_zdz"]=> string(13) "4.6V @ 107µA" ["bt_vgs_sjdh"]=> string(12) "40.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3230pF @ 75V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "139W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(12) "PG-TDSON-8-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: BSC093N15NS5ATMA1复制
状态: 爆款 修改
品牌: Infineon/英飞凌复制
封装:PG-TDSON-8-7
外壳:8-PowerTDFN
描述: MOSFET N-CH 150V 87A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3839 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):150V
电流-连续漏极(id):87A(Tc)
Vgs(最大值):±20V
功率-最大值:139W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10393839
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC093N15NS5ATMA1' ) LIMIT 1
供应商:
库存:35K+
array(74) { ["id"]=> string(4) "5617" ["pdf_add"]=> string(46) "https://www.vishay.com/docs/65158/sqd19p06.pdf" ["pdf_dir"]=> string(29) "./datasheet/1039/sqd19p06.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5347%7EN%2CP%7E2.jpg" ["images_dir"]=> string(34) "./images/1039/SQD40N06-25L-GE3.jpg" ["ljbh"]=> string(19) "SQD19P06-60L_GE3-ND" ["zzsbh"]=> string(16) "SQD19P06-60L_GE3" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.198260" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 60V 20A TO252" ["xl"]=> string(33) "Automotive, AEC-Q101, TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "20A(Tc)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(21) "55 毫欧 @ 19A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "41nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1490pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "46W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3,DPak(2 引线 + 接片),SC-63" ["gysqjfz"]=> string(20) "TO-252,(D-Pak)" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SQD19P06-60L_GE3复制
状态: 爆款 修改
品牌: Vishay/威世复制
封装:TO-252,(D-Pak)
外壳:TO-252-3,DPak(2 引线 + 接片),SC-63
描述: MOSFET P-CH 60V 20A TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5617 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):60V
电流-连续漏极(id):20A(Tc)
Vgs(最大值):±20V
功率-最大值:46W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:10395617
10+: 7.77
2000+: 5.95
起订量:10 修改
包装量: 2000个/ 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQD19P06-60L_GE3' ) LIMIT 1
供应商:
库存:22K+
array(74) { ["id"]=> string(4) "8303" ["pdf_add"]=> string(58) "http://www.onsemi.com/pub_link/Collateral/NTTFS4C06N-D.PDF" ["pdf_dir"]=> string(33) "./datasheet/1039/NTTFS4C06N-D.PDF" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Renders/On%20Semi%20Renders/488;-511AB;-;-8.jpg" ["images"]=> string(85) "https://www.chenkeiot.com/Public/imagesmk/Renders/On_Semi_Renders/488;-511AB;-;-8.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(16) "NTTFS4C06NTAG-ND" ["zzsbh"]=> string(13) "NTTFS4C06NTAG" ["zddgs"]=> string(4) "1500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 30V 11A/67A 8WDFN" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(16) "ON Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "11A(Ta),67A(Tc)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "4.2 毫欧 @ 30A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3366pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "810mW(Ta),31W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(19) "8-WDFN(3.3x3.3)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: NTTFS4C06NTAG复制
状态: 爆款 修改
品牌: ONSEMI/安森美复制
封装:8-WDFN(3.3x3.3)
外壳:8-PowerWDFN
描述: MOSFET N-CH 30V 11A/67A 8WDFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8303 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):11A(Ta),67A(Tc)
Vgs(最大值):±20V
功率-最大值:810mW(Ta),31W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10398303
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NTTFS4C06NTAG' ) LIMIT 1
供应商:
库存:34K+
array(74) { ["id"]=> string(4) "9845" ["pdf_add"]=> string(55) "http://www.onsemi.com/pub_link/Collateral/2N7002K-D.PDF" ["pdf_dir"]=> string(30) "./datasheet/1039/2N7002K-D.PDF" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/On%20Semi%20Renders/SOT-23-3_527AG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "2V7002KT1GOSTR-ND" ["zzsbh"]=> string(10) "2V7002KT1G" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 320MA SOT23" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(16) "ON Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(13) "320mA(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(24) "1.6 欧姆 @ 500mA,10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) ".7nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "24.5pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "300mW(Tj)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(6) "SOT-23" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: 2V7002KT1G复制
状态: 爆款 修改
品牌: ONSEMI/安森美复制
封装:SOT-23
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 60V 320MA SOT23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9845 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):60V
电流-连续漏极(id):320mA(Ta)
Vgs(最大值):±20V
功率-最大值:300mW(Tj)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10399845
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '2V7002KT1G' ) LIMIT 1
供应商:
库存:346K+
array(74) { ["id"]=> string(4) "9881" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/68717/si2333cd.pdf" ["pdf_dir"]=> string(29) "./datasheet/1039/si2333cd.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "SI2333CDS-T1-GE3TR-ND" ["zzsbh"]=> string(16) "SI2333CDS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 12V 7.1A SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(12) "7.1A(Tc)" ["qddy"]=> string(11) "1.8V,4.5V" ["bt_id_vgs_rds"]=> string(23) "35 毫欧 @ 5.1A,4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "25nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "1225pF @ 6V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "1.25W(Ta),2.5W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "O3***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2333CDS-T1-GE3复制
状态: 爆款 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 12V 7.1A SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9881 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):12V
电流-连续漏极(id):7.1A(Tc)
Vgs(最大值):±8V
功率-最大值:1.25W(Ta),2.5W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:10399881
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2333CDS-T1-GE3' ) LIMIT 1
供应商:
库存:21K+
array(74) { ["id"]=> string(5) "20359" ["pdf_add"]=> string(86) "https://www.infineon.com/dgdl/irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1" ["pdf_dir"]=> string(33) "./datasheet/1039/irfts8342pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-6%20PKG.jpg" ["images"]=> string(79) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2605/SOT-23-6%20PKG.jpg" ["images_dir"]=> string(27) "./images/1039/STT4PF20V.jpg" ["ljbh"]=> string(19) "IRFTS8342TRPBFTR-ND" ["zzsbh"]=> string(14) "IRFTS8342TRPBF" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "1.113380" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 8.2A 6TSOP" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "8.2A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(22) "19 毫欧 @ 8.2A,10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(12) "4.8nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "560pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "2W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "SOT-23-6" ["gysqjfz"]=> string(6) "6-TSOP" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "801" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IRFTS8342TRPBF复制
状态: 爆款 修改
品牌: Infineon/英飞凌复制
封装:6-TSOP
外壳:SOT-23-6
描述: MOSFET N-CH 30V 8.2A 6TSOP
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20359 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):8.2A(Ta)
Vgs(最大值):±20V
功率-最大值:2W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103920359
10+: 1.66
3000+: 1.27
起订量:10 修改
包装量: 3000个/ 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFTS8342TRPBF' ) LIMIT 1
供应商:
库存:13K+
array(74) { ["id"]=> string(5) "20389" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irll024npbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Renders/Diodes%20Renders/SOT223-3L.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Diodes_Renders/SOT223-3L.jpg" ["images_dir"]=> string(26) "./images/1039/STN2NF10.jpg" ["ljbh"]=> string(16) "IRLL024NPBFTR-ND" ["zzsbh"]=> string(13) "IRLL024NTRPBF" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 55V 3.1A SOT223" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(12) "3.1A(Ta)" ["qddy"]=> string(8) "4V,10V" ["bt_id_vgs_rds"]=> string(22) "65 毫欧 @ 3.1A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "15.6nC @ 5V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(11) "510pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(10) "1W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "TO-261-4,TO-261AA" ["gysqjfz"]=> string(7) "SOT-223" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IRLL024NTRPBF复制
状态: 爆款 修改
品牌: Infineon/英飞凌复制
封装:SOT-223
外壳:TO-261-4,TO-261AA
描述: MOSFET N-CH 55V 3.1A SOT223
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20389 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):55V
电流-连续漏极(id):3.1A(Ta)
Vgs(最大值):±16V
功率-最大值:1W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103920389
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLL024NTRPBF' ) LIMIT 1
供应商:
库存:16K+
array(74) { ["id"]=> string(5) "20395" ["pdf_add"]=> string(93) "https://www.infineon.com/assets/row/public/documents/24/49/infineon-irlr024n-datasheet-en.pdf" ["pdf_dir"]=> string(51) "./datasheet/1039/infineon-irlr024n-datasheet-en.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/TO-252-3.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6166/448%7ETO252AA%7E%7E2.jpg" ["images_dir"]=> string(32) "./images/1039/IRLR8726TRLPBF.jpg" ["ljbh"]=> string(16) "IRLR024NPBFTR-ND" ["zzsbh"]=> string(13) "IRLR024NTRPBF" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "1.931550" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 55V 17A DPAK" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(11) "17A(Tc)" ["qddy"]=> string(8) "4V,10V" ["bt_id_vgs_rds"]=> string(21) "65 毫欧 @ 10A,10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "15nC @ 5V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(11) "480pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "45W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3,DPak(2 引线 + 接片),SC-63" ["gysqjfz"]=> string(5) "D-Pak" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IRLR024NTRPBF复制
状态: 爆款 修改
品牌: Infineon/英飞凌复制
封装:D-Pak
外壳:TO-252-3,DPak(2 引线 + 接片),SC-63
描述: MOSFET N-CH 55V 17A DPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20395 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):55V
电流-连续漏极(id):17A(Tc)
Vgs(最大值):±16V
功率-最大值:45W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103920395
10+: 2.89
2000+: 2.21
起订量:10 修改
包装量: 2000个/ 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLR024NTRPBF' ) LIMIT 1
供应商:
库存:11K+
array(74) { ["id"]=> string(5) "21561" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff" ["pdf_dir"]=> string(54) "./datasheet/1039/Infineon-IPT015N10N5-DS-v02_01-EN.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Photos/Infineon%20Photos/IPT059N15N3ATMA1.JPG" ["images"]=> string(85) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/IPT059N15N3ATMA1.JPG" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPT015N10N5ATMA1TR-ND" ["zzsbh"]=> string(16) "IPT015N10N5ATMA1" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(4) "2000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 100V 300A 8HSOF" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "300A(Tc)" ["qddy"]=> string(8) "6V,10V" ["bt_id_vgs_rds"]=> string(23) "1.5 毫欧 @ 150A,10V" ["bt_id_vgs_zdz"]=> string(13) "3.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "211nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "16000pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "375W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(10) "8-PowerSFN" ["gysqjfz"]=> string(11) "PG-HSOF-8-1" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPT015N10N5ATMA1复制
状态: 爆款 修改
品牌: Infineon/英飞凌复制
封装:PG-HSOF-8-1
外壳:8-PowerSFN
描述: MOSFET N-CH 100V 300A 8HSOF
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 21561 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):100V
电流-连续漏极(id):300A(Tc)
Vgs(最大值):±20V
功率-最大值:375W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103921561
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPT015N10N5ATMA1' ) LIMIT 1
供应商:
库存:23K+
array(74) { ["id"]=> string(5) "22180" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irf5210spbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "IRF5210STRLPBFTR-ND" ["zzsbh"]=> string(14) "IRF5210STRLPBF" ["zddgs"]=> string(3) "800" ["xysl"]=> string(4) "3200" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 100V 38A D2PAK" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "38A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "60 毫欧 @ 38A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "230nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2780pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W(Ta),170W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3,D²Pak(2 引线 + 接片),TO-263AB" ["gysqjfz"]=> string(5) "D2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IRF5210STRLPBF复制
状态: 爆款 修改
品牌: Infineon/英飞凌复制
封装:D2PAK
外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
描述: MOSFET P-CH 100V 38A D2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22180 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):100V
电流-连续漏极(id):38A(Tc)
Vgs(最大值):±20V
功率-最大值:3.1W(Ta),170W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103922180
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF5210STRLPBF' ) LIMIT 1
供应商:
库存:800
array(74) { ["id"]=> string(5) "22850" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irfz44nspbf.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "IRFZ44NSTRLPBFTR-ND" ["zzsbh"]=> string(14) "IRFZ44NSTRLPBF" ["zddgs"]=> string(3) "800" ["xysl"]=> string(4) "3200" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 55V 49A D2PAK" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(11) "49A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "17.5 毫欧 @ 25A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "63nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1470pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W(Ta),94W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3,D²Pak(2 引线 + 接片),TO-263AB" ["gysqjfz"]=> string(5) "D2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IRFZ44NSTRLPBF复制
状态: 爆款 修改
品牌: Infineon/英飞凌复制
封装:D2PAK
外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
描述: MOSFET N-CH 55V 49A D2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22850 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):55V
电流-连续漏极(id):49A(Tc)
Vgs(最大值):±20V
功率-最大值:3.8W(Ta),94W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103922850
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFZ44NSTRLPBF' ) LIMIT 1
供应商:
库存:26K+
array(74) { ["id"]=> string(5) "25620" ["pdf_add"]=> string(86) "https://www.infineon.com/dgdl/irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c" ["pdf_dir"]=> string(33) "./datasheet/1039/irlr2905zpbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/TO-252-3.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6166/448%7ETO252AA%7E%7E2.jpg" ["images_dir"]=> string(32) "./images/1039/IRLR8726TRLPBF.jpg" ["ljbh"]=> string(19) "IRLR2905ZTRPBFTR-ND" ["zzsbh"]=> string(14) "IRLR2905ZTRPBF" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.357010" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 55V 42A DPAK" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(11) "42A(Tc)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(23) "13.5 毫欧 @ 36A,10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(9) "35nC @ 5V" ["vgs_zdz"]=> string(5) "±16V" ["bt_vds_srdr"]=> string(12) "1570pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "110W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 175°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3,DPak(2 引线 + 接片),SC-63" ["gysqjfz"]=> string(5) "D-Pak" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IRLR2905ZTRPBF复制
状态: 爆款 修改
品牌: Infineon/英飞凌复制
封装:D-Pak
外壳:TO-252-3,DPak(2 引线 + 接片),SC-63
描述: MOSFET N-CH 55V 42A DPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25620 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):55V
电流-连续漏极(id):42A(Tc)
Vgs(最大值):±16V
功率-最大值:110W(Tc)
工作温度:-55°C ~ 175°C(TJ)
丝印:(请登录)
料号:103925620
10+: 5.02
2000+: 3.84
起订量:10 修改
包装量: 2000个/ 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLR2905ZTRPBF' ) LIMIT 1
供应商:
库存:16K+
array(74) { ["id"]=> string(5) "25774" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/91284/sihfr931.pdf" ["pdf_dir"]=> string(29) "./datasheet/1039/sihfr931.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(105) "//media.digikey.com/Renders/Vishay%20Semi%20Renders/TO-252-3,%20DPak%20(2%20Leads%20+%20Tab),%20SC-63.jpg" ["images"]=> string(104) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5973%7EB%2CD%2CFN%2CR%2CS%2CW%7E3.jpg" ["images_dir"]=> string(27) "./images/1039/IRLR024TR.jpg" ["ljbh"]=> string(18) "IRFR9310TRPBFTR-ND" ["zzsbh"]=> string(13) "IRFR9310TRPBF" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.322550" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET P-CH 400V 1.8A DPAK" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "400V" ["dl_lxlj"]=> string(12) "1.8A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "7 欧姆 @ 1.1A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "13nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "270pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "50W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3,DPak(2 引线 + 接片),SC-63" ["gysqjfz"]=> string(5) "D-Pak" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IRFR9310TRPBF复制
状态: 爆款 修改
品牌: Vishay/威世复制
封装:D-Pak
外壳:TO-252-3,DPak(2 引线 + 接片),SC-63
描述: MOSFET P-CH 400V 1.8A DPAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25774 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):400V
电流-连续漏极(id):1.8A(Tc)
Vgs(最大值):±20V
功率-最大值:50W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103925774
10+: 7.96
2000+: 6.09
起订量:10 修改
包装量: 2000个/ 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFR9310TRPBF' ) LIMIT 1
供应商:
库存:9K+
array(74) { ["id"]=> string(5) "26537" ["pdf_add"]=> string(54) "http://www.fairchildsemi.com/datasheets/FD/FDC2512.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(73) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/SOT-23-6%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/6-SO-2.9-1.6-0.95A.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(12) "FDC2512TR-ND" ["zzsbh"]=> string(7) "FDC2512" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 150V 1.4A SSOT-6" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(12) "1.4A(Ta)" ["qddy"]=> string(8) "6V,10V" ["bt_id_vgs_rds"]=> string(23) "425 毫欧 @ 1.4A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "11nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "344pF @ 75V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.6W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "SOT-23-6 细型,TSOT-23-6" ["gysqjfz"]=> string(13) "SuperSOT™-6" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "801" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FDC2512复制
状态: 爆款 修改
品牌: ONSEMI/安森美复制
封装:SuperSOT™-6
外壳:SOT-23-6 细型,TSOT-23-6
描述: MOSFET N-CH 150V 1.4A SSOT-6
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26537 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):150V
电流-连续漏极(id):1.4A(Ta)
Vgs(最大值):±20V
功率-最大值:1.6W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103926537
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDC2512' ) LIMIT 1
供应商:
库存:8K+
array(74) { ["id"]=> string(5) "27050" ["pdf_add"]=> string(45) "http://www.vishay.com/docs/65701/si2300ds.pdf" ["pdf_dir"]=> string(29) "./datasheet/1039/si2300ds.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "SI2300DS-T1-GE3TR-ND" ["zzsbh"]=> string(15) "SI2300DS-T1-GE3" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "27000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(0) "" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 30V 3.6A SOT-23" ["xl"]=> string(11) "TrenchFET®" ["zzs"]=> string(13) "Vishay/威世" ["zzs_new"]=> string(13) "Vishay/威世" ["zzs_old"]=> string(6) "Vishay" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "3.6A(Tc)" ["qddy"]=> string(11) "2.5V,4.5V" ["bt_id_vgs_rds"]=> string(23) "68 毫欧 @ 2.9A,4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "10nC @ 10V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(11) "320pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "1.1W(Ta),1.7W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(20) "SOT-23-3(TO-236)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "卷盘" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(5) "P2***" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "1" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "4" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: SI2300DS-T1-GE3复制
状态: 爆款 修改
品牌: Vishay/威世复制
封装:SOT-23-3(TO-236)
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET N-CH 30V 3.6A SOT-23
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27050 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):30V
电流-连续漏极(id):3.6A(Tc)
Vgs(最大值):±12V
功率-最大值:1.1W(Ta),1.7W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103927050
量大可议价
起订量:10 修改
包装量: 3000个/ 卷盘 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI2300DS-T1-GE3' ) LIMIT 1
供应商:
array(74) { ["id"]=> string(5) "27080" ["pdf_add"]=> string(70) "https://www.umw-ic.com/static/pdf/bb23b49089c237ef2d05af43a615f010.pdf" ["pdf_dir"]=> string(53) "./datasheet/1039/bb23b49089c237ef2d05af43a615f010.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/SOT-23-3%20PKG.jpg" ["images"]=> string(80) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6366/MFG_4518_SOT-23.jpg" ["images_dir"]=> string(24) "./images/1039/BSS138.jpg" ["ljbh"]=> string(12) "FDN336PTR-ND" ["zzsbh"]=> string(7) "FDN336P" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "15000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET P-CH 20V 1.3A SUPERSOT3" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "1.3A(Ta)" ["qddy"]=> string(11) "2.5V,4.5V" ["bt_id_vgs_rds"]=> string(24) "200 毫欧 @ 1.3A,4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "5nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(11) "330pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "500mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(27) "TO-236-3,SC-59,SOT-23-3" ["gysqjfz"]=> string(10) "SuperSOT-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(3) "336" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "804" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: FDN336P复制
状态: 爆款 修改
品牌: ONSEMI/安森美复制
封装:SuperSOT-3
外壳:TO-236-3,SC-59,SOT-23-3
描述: MOSFET P-CH 20V 1.3A SUPERSOT3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27080 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):20V
电流-连续漏极(id):1.3A(Ta)
Vgs(最大值):±8V
功率-最大值:500mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103927080
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDN336P' ) LIMIT 1
供应商:
库存:16K+
array(74) { ["id"]=> string(5) "27152" ["pdf_add"]=> string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/45/DMP3017SFG.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(68) "//media.digikey.com/Renders/Diodes%20Renders/31;PowerDI3333-8;;8.jpg" ["images"]=> string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6295/31%7EPOWERDI3333-8%7E%7E8.jpg" ["images_dir"]=> string(30) "./images/1039/DMN4010LFG-7.jpg" ["ljbh"]=> string(19) "DMP3017SFG-7DITR-ND" ["zzsbh"]=> string(12) "DMP3017SFG-7" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(5) "14000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "1.455570" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET P-CH 30V POWERDI3333-8" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "DIODES/美台" ["zzs_new"]=> string(13) "DIODES/美台" ["zzs_old"]=> string(19) "Diodes Incorporated" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(13) "11.5A(Ta)" ["qddy"]=> string(10) "4.5V,10V" ["bt_id_vgs_rds"]=> string(23) "10 毫欧 @ 11.5A,10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "41nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "2246pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "940mW(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(13) "PowerDI3333-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: DMP3017SFG-7复制
状态: 爆款 修改
品牌: DIODES/美台复制
封装:PowerDI3333-8
外壳:8-PowerVDFN
描述: MOSFET P-CH 30V POWERDI3333-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27152 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):30V
电流-连续漏极(id):11.5A(Ta)
Vgs(最大值):±25V
功率-最大值:940mW(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103927152
10+: 2.18
2000+: 1.67
起订量:10 修改
包装量: 2000个/ 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'DMP3017SFG-7' ) LIMIT 1
供应商:
库存:63K+
array(74) { ["id"]=> string(5) "27467" ["pdf_add"]=> string(55) "http://www.diodes.com/_files/datasheets/ZXMP10A17E6.pdf" ["pdf_dir"]=> string(32) "./datasheet/1039/ZXMP10A17E6.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/Diodes%20Renders/SOT-23-6%20PKG.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/6-SO-2.9-1.6-0.95.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(16) "ZXMP10A17E6TR-ND" ["zzsbh"]=> string(13) "ZXMP10A17E6TA" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(5) "24000" ["cfkc"]=> string(5) "66000" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET P-CH 100V 1.3A SOT23-6" ["xl"]=> string(1) "-" ["zzs"]=> string(13) "DIODES/美台" ["zzs_new"]=> string(13) "DIODES/美台" ["zzs_old"]=> string(19) "Diodes Incorporated" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "1.3A(Ta)" ["qddy"]=> string(8) "6V,10V" ["bt_id_vgs_rds"]=> string(23) "350 毫欧 @ 1.4A,10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "6.1nC @ 5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "424pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.1W(Ta)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "SOT-23-6" ["gysqjfz"]=> string(6) "SOT-26" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "801" ["ljzt"]=> string(6) "爆款" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: ZXMP10A17E6TA复制
状态: 爆款 修改
品牌: DIODES/美台复制
封装:SOT-26
外壳:SOT-23-6
描述: MOSFET P-CH 100V 1.3A SOT23-6
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27467 ) LIMIT 1
Fet类型:P 通道
漏源极电压(vdss):100V
电流-连续漏极(id):1.3A(Ta)
Vgs(最大值):±20V
功率-最大值:1.1W(Ta)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103927467
量大可议价
起订量:10 修改
包装量: 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'ZXMP10A17E6TA' ) LIMIT 1
供应商:
库存:3K+
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