产品属性 | 属性值 |
---|---|
系列 | HEXFET® |
Fet类型: | MOSFET P 通道,金属氧化物 |
漏源极电压(vdss): | 30V |
电流-连续漏极(id): | 760mA(Ta) |
Vgs(最大值): | |
功率-最大值: | 540mW |
工作温度: | -55°C ~ 150°C(TJ) |
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