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array(75) {
["id"]=>
string(5) "25810"
["pdf_add"]=>
string(84) "https://www.infineon.com/dgdl/irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18"
["pdf_dir"]=>
string(31) "./datasheet/1039/irf7470pbf.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg"
["images_dir"]=>
string(30) "./images/1039/IRF9335TRPBF.jpg"
["ljbh"]=>
string(15) "IRF7470PBFTR-ND"
["zzsbh"]=>
string(12) "IRF7470TRPBF"
["zddgs"]=>
string(4) "4000"
["xysl"]=>
string(4) "8000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.862600"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(23) "MOSFET N-CH 40V 10A 8SO"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(10) "2.8V，10V"
["bt_id_vgs_rds"]=>
string(21) "13 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "44nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "3430pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "2.5W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "4000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
["url"]=>
string(11) "c1039125810"
}
SELECT a.mpn_td_pintopin,b.* FROM golon_jtg_fet_mosfet_d_td a LEFT JOIN golon_jtg_fet_mosfet_d b on a.mpnid=b.id WHERE ( `mpnid` = '25810' ) LIMIT 1
 |
IRF7470TRPBFInfineon/英飞凌8-SO
25810
MOSFET N-CH 40V 10A 8SO
1Fet类型1：N 通道
2漏源极电压(vdss)2：40V
3电流-连续漏极(id)3：10A（Ta）
4Vgs(最大值)4：±12V
5功率-最大值：2.5W（Ta）
6工作温度：-55°C ~ 150°C（TJ）
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