产品属性 | 属性值 |
---|---|
系列 | TrenchFET® |
Fet类型: | N 通道 |
漏源极电压(vdss): | 250V |
电流-连续漏极(id): | 3.4A(Ta),12.3A(Tc) |
Vgs(最大值): | ±20V |
功率-最大值: | 5.1W (Ta),65.8W (Tc) |
工作温度: | -55°C ~ 150°C(TJ) |
同类热销产品 | ||
---|---|---|
![]() |
SIS439DNT-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)8914
MOSFET P-CH 30V 50A 1212-8
|
![]() |
![]() |
SI7655ADN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)9956
MOSFET P-CH 20V 40A 1212-8S
|
![]() |
![]() |
SISS23DN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)20521
MOSFET P-CH 20V 50A PPAK 1212-8S
|
![]() |
![]() |
SI7655DN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)22673
MOSFET P-CH 20V 40A PPAK 1212
|
![]() |
![]() |
SISS27DN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)23289
MOSFET P-CH 30V 50A PPAK 1212-8S
|
![]() |
![]() |
SISS10DN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)30956
MOSFET N-CH 40V 60A PPAK 1212-8S
|
![]() |
![]() |
SIS612EDNT-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)31175
MOSFET N-CH 20V 50A SMT
|
![]() |
![]() |
SISS40DN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)35016
MOSFET N-CH 100V 36.5A PPAK 1212
|
![]() |
![]() |
SISS10ADN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)45832
MOSFET N-CHAN 40 V POWERPAK 1212
|
![]() |
![]() |
SISS27ADN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)45865
MOSFET P-CH 30V 50A POWERPAK1212
|
![]() |
![]() |
SIS106DN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)45908
MOSFET N-CHAN 60V POWERPAK 1212-
|
![]() |
![]() |
SISS67DN-T1-GE3Vishay/威世PowerPAK® 1212-8S(3.3x3.3)45918
MOSFET P-CHAN 30V POWERPAK 1212-
|
![]() |