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array(75) {
["id"]=>
string(5) "55660"
["pdf_add"]=>
string(0) ""
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
NULL
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "SiHU6N80E-VB"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.520000"
["gys_id"]=>
string(3) "370"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(82) "TO251；N—Channel沟道,800V；6A；RDS(ON)=850mΩ@VGS=10V,VGS=30V；Vth=2~4V；"
["xl"]=>
string(0) ""
["zzs"]=>
string(13) "VBsemi/微碧"
["zzs_new"]=>
string(13) "VBsemi/微碧"
["zzs_old"]=>
string(23) "VBsemi(微碧半导体)"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(17) "N—Channel沟道"
["js"]=>
string(0) ""
["ldjdy"]=>
string(4) "800V"
["dl_lxlj"]=>
string(2) "6A"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(0) ""
["bt_id_vgs_zdz"]=>
string(0) ""
["bt_vgs_sjdh"]=>
string(0) ""
["vgs_zdz"]=>
NULL
["bt_vds_srdr"]=>
string(0) ""
["fetgn"]=>
NULL
["gn_zdz"]=>
NULL
["gzwd"]=>
string(0) ""
["azlx"]=>
string(0) ""
["fz_wk"]=>
string(0) ""
["gysqjfz"]=>
string(5) "TO251"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "4000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
NULL
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1711531337"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
NULL
["yqjtd_jianrong"]=>
NULL
["url"]=>
string(11) "c1039155660"
}
SELECT a.mpn_td_pintopin,b.* FROM golon_jtg_fet_mosfet_d_td a LEFT JOIN golon_jtg_fet_mosfet_d b on a.mpnid=b.id WHERE ( `mpnid` = '46104' ) LIMIT 1
|
SiHU6N80E-VBVBsemi/微碧TO251
55660
TO251；N—Channel沟道,800V；6A；RDS(ON)=850mΩ@VGS=10V,VGS=30V；Vth=2~4V；
1Fet类型1：N 通道
2漏源极电压(vdss)2：800V
3电流-连续漏极(id)3：5.4A（Tc）
4Vgs(最大值)4：±30V
5功率-最大值：78W（Tc）
6工作温度：-55°C ~ 150°C（TJ）
|
 |
STU6N90K5ST/意法半导体IPAK（TO-251）48242
N-CHANNEL 900 V, 2.1 OHM TYP., 3
1Fet类型1：N 通道
2漏源极电压(vdss)2：800V
3电流-连续漏极(id)3：5.4A（Tc）
4Vgs(最大值)4：±30V
5功率-最大值：78W（Tc）
6工作温度：-55°C ~ 150°C（TJ）
|
|
;;3.jpg)
