产品属性 | 属性值 |
---|---|
系列 | - |
存储器格式: | DRAM |
存储容量: | 512Mb (32M x 16) |
存储器接口: | 5.4ns |
电压-电源: | 3V ~ 3.6V |
存储器类型: | 易失 |
工作温度: | -40°C ~ 85°C(TA) |
同类热销产品 | ||
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IS42S16160D-7BISSI/芯成54-TFBGA(8x13)3140
IC DRAM 256M PARALLEL 54TFBGA
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IS42S16160D-7B-TRISSI/芯成54-TFBGA(8x13)3272
IC DRAM 256M PARALLEL 54TFBGA
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IS42S16320F-6BLI-TRISSI/芯成54-TFBGA(8x13)3463
IC DRAM 512M PARALLEL 54TFBGA
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IS42S16320F-6BLISSI/芯成54-TFBGA(8x13)3484
IC DRAM 512M PARALLEL 54TFBGA
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IS42S16320F-7BLI-TRISSI/芯成54-TFBGA(8x13)3496
IC DRAM 512M PARALLEL 54TFBGA
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IS42S16320D-6BL-TRISSI/芯成54-TFBGA(8x13)3510
IC DRAM 512M PARALLEL 54TFBGA
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IS42S16320D-7BL-TRISSI/芯成54-TFBGA(8x13)3564
IC DRAM 512M PARALLEL 54TFBGA
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IS42S16320F-7BL-TRISSI/芯成54-TFBGA(8x13)3596
IC DRAM 512M PARALLEL 54TFBGA
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IS42VM16320D-75BLIISSI/芯成54-TFBGA(8x13)3610
IC DRAM 512M PARALLEL 54TFBGA
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IS42VM16320D-6BLIISSI/芯成54-TFBGA(8x13)3639
IC DRAM 512M PARALLEL 54TFBGA
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IS42S16320F-6BL-TRISSI/芯成54-TFBGA(8x13)3642
IC DRAM 512M PARALLEL 54TFBGA
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IS42VM16320D-6BLI-TRISSI/芯成54-TFBGA(8x13)3702
IC DRAM 512M PARALLEL 54TFBGA
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