品牌:
array(2) { [0]=> string(16) "ONSEMI/安森美" [1]=> string(13) "VBsemi/微碧" }

FDG6304P数据手册

× 关闭

FDG6304P_D87Z数据手册

× 关闭

FDG6304P-F169数据手册

× 关闭
缓冲

FDG6304P-X数据手册

× 关闭
缓冲

FDG6304P-VB数据手册

× 关闭
缓冲
封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号: FDG6304P复制
状态: 在售 修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'ONSEMI/安森美' ) LIMIT 1 品牌: ONSEMI/安森美复制
封装:SC-70-6
外壳:6-TSSOP,SC-88,SOT-363
描述: MOSFET 2P-CH 25V 0.41A SC70-6
Fet类型: 2 个 P 沟道(双)
漏源极电压(vdss): 25V
电流-连续漏极(id): 410mA
最大功率值: 300mW
Fet功能: 逻辑电平门
工作温度: -55°C ~ 150°C(TJ)
等级:-
量大可议价
包装量: 修改
起订量:10 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDG6304P' ) LIMIT 1
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号: FDG6304P_D87Z复制
状态: 在售 修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'ONSEMI/安森美' ) LIMIT 1 品牌: ONSEMI/安森美复制
封装:SC-70-6
外壳:6-TSSOP,SC-88,SOT-363
描述: MOSFET 2P-CH 25V 0.41A SC70-6
Fet类型: 2 个 P 沟道(双)
漏源极电压(vdss): 25V
电流-连续漏极(id): 410mA
最大功率值: 300mW
Fet功能: 逻辑电平门
工作温度: -55°C ~ 150°C(TJ)
等级:-
量大可议价
包装量: 修改
起订量:10 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDG6304P_D87Z' ) LIMIT 1
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号: FDG6304P-F169复制
状态: 在售 修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'ONSEMI/安森美' ) LIMIT 1 品牌: ONSEMI/安森美复制
封装:SC-88/SC70-6/SOT-363
外壳:6-TSSOP,SC-88,SOT-363
描述: INTEGRATED CIRCUIT
Fet类型: 2 个 P 沟道(双)
漏源极电压(vdss): 25V
电流-连续漏极(id): 410mA(Ta)
最大功率值: 300mW
Fet功能: 逻辑电平门
工作温度: -55°C ~ 150°C(TJ)
等级:-
量大可议价
包装量: 修改
起订量:10 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDG6304P-F169' ) LIMIT 1
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号: FDG6304P-X复制
状态: 在售 修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'ONSEMI/安森美' ) LIMIT 1 品牌: ONSEMI/安森美复制
封装:-
外壳:-
描述: INTEGRATED CIRCUIT
Fet类型: -
漏源极电压(vdss): -
电流-连续漏极(id): -
最大功率值: -
Fet功能: -
工作温度: -
等级:-
量大可议价
包装量: 修改
起订量:10 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDG6304P-X' ) LIMIT 1
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号: FDG6304P-VB复制
状态: 在售 修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'VBsemi/微碧' ) LIMIT 1 品牌: VBsemi/微碧复制
封装:SC70-6
描述: 2个P沟道,-20V,-1.5A,RDS(ON),230mΩ@4.5V,276mΩ@2.5V,12Vgs(±V);-0.6~-2Vth(V);SC70-6
Fet类型:
漏源极电压(vdss):
电流-连续漏极(id):
最大功率值:
Fet功能:
工作温度:
等级:-
10+: 0.91
3000+: 0.70 array(5) { ["count"]=> string(1) "1" ["gys_id"]=> string(3) "370" ["zzsbh"]=> string(11) "FDG6304P-VB" ["price"]=> string(3) "0.6" ["show_price"]=> string(0) "" }
包装量: 3000个/ 卷盘 修改
起订量:10 修改
总额:
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDG6304P-VB' ) LIMIT 1
供应商:1
库存:10K+
已成功加入询盘!
复制成功
销售在线 销售在线 工程师在线 工程师在线 电话咨询

销售在线

刘s:2355289363

手机: 15074164838

销售在线

陈s:2355289368

手机: 13510573285

工程师在线

吴工:2355289360

手机: 13824329149

工程师在线

陈工:2355289365

手机: 15818753382

电话咨询

0755-28435922