EPC公司介绍和产品目录_EPC_专区_授权代理商

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(69) { ["id"]=> string(3) "523" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2106_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(51) "//media.digikey.com/Photos/EPC/MFG_EPC2106ENGRT.jpg" ["images"]=> string(73) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2106ENGRT.jpg" ["ljbh"]=> string(20) "917-EPC2106ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2106ENGRT" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "2000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "GAN TRANS 2N-CH 100V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "1.7A" ["bt_id_vgs_rds"]=> string(19) "70 毫欧 @ 2A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 600µA" ["bt_vgs_sjdh"]=> string(11) "0.73nC @ 5V" ["bt_vds_srdr"]=> string(10) "75pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2106ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GAN TRANS 2N-CH 100V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 523 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：1041523 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(3) "545" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2103_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(20) "917-EPC2103ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2103ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "GANFET TRANS SYM HALF BRDG 80V" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "5.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "6.5nC @ 5V" ["bt_vds_srdr"]=> string(12) "7600pF @ 40V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2103ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS SYM HALF BRDG 80V	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 545 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：80V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-	类别：多通道MOS管丝印：(请登录) 料号：1041545 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(3) "622" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2105_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(17) "917-EPC2105ENG-ND" ["zzsbh"]=> string(10) "EPC2105ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(3) "180" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 80V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(10) "9.5A，38A" ["bt_id_vgs_rds"]=> string(22) "14.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(10) "2.5nC @ 5V" ["bt_vds_srdr"]=> string(11) "300pF @ 40V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "散装" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2105ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 80V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 622 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：80V 电流-连续漏极(id)：9.5A，38A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：1041622 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 散装修改个个散装咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1133" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2108_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg" ["images"]=> string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC210xENGRT.jpg" ["ljbh"]=> string(20) "917-EPC2108ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2108ENGRT" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "TRANS GAN 3N-CH BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(37) "3 N 沟道（半桥 + 同步自举）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(10) "60V，100V" ["dl_lxlj"]=> string(12) "1.7A，500mA" ["bt_id_vgs_rds"]=> string(22) "190 毫欧 @ 2.5A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 200µA" ["bt_vgs_sjdh"]=> string(11) "0.22nC @ 5V" ["bt_vds_srdr"]=> string(10) "22pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2108ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 3N-CH BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1133 ) LIMIT 1 Fet类型：3 N 沟道（半桥 + 同步自举） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V，100V 电流-连续漏极(id)：1.7A，500mA 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411133 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1135" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2107_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg" ["images"]=> string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC210xENGRT.jpg" ["ljbh"]=> string(20) "917-EPC2107ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2107ENGRT" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "TRANS GAN 3N-CH 100V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(37) "3 N 沟道（半桥 + 同步自举）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "1.7A，500mA" ["bt_id_vgs_rds"]=> string(20) "320 毫欧 @ 2A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 100µA" ["bt_vgs_sjdh"]=> string(11) "0.16nC @ 5V" ["bt_vds_srdr"]=> string(10) "16pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2107ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 3N-CH 100V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1135 ) LIMIT 1 Fet类型：3 N 沟道（半桥 + 同步自举） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A，500mA 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411135 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1173" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2100_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(17) "917-EPC2100ENG-ND" ["zzsbh"]=> string(10) "EPC2100ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 30V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "9.5A，38A" ["bt_id_vgs_rds"]=> string(19) "8 毫欧 @ 25A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 4mA" ["bt_vgs_sjdh"]=> string(11) "3.5nC @ 15V" ["bt_vds_srdr"]=> string(11) "380pF @ 15V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2100ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 30V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1173 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：30V 电流-连续漏极(id)：9.5A，38A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411173 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1174" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2104_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(17) "917-EPC2104ENG-ND" ["zzsbh"]=> string(10) "EPC2104ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "TRANS GAN 2N-CH 100V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "6.3 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 5.5mA" ["bt_vgs_sjdh"]=> string(8) "7nC @ 5V" ["bt_vds_srdr"]=> string(11) "800pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2104ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 100V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1174 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411174 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1184" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2110_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(51) "//media.digikey.com/Photos/EPC/MFG_EPC2110ENGRT.jpg" ["images"]=> string(73) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2110ENGRT.jpg" ["ljbh"]=> string(20) "917-EPC2110ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2110ENGRT" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "GAN TRANS 2N-CH 120V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共源" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "120V" ["dl_lxlj"]=> string(4) "3.4A" ["bt_id_vgs_rds"]=> string(19) "60 毫欧 @ 4A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 700µA" ["bt_vgs_sjdh"]=> string(10) "0.8nC @ 5V" ["bt_vds_srdr"]=> string(10) "80pF @ 60V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2110ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GAN TRANS 2N-CH 120V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1184 ) LIMIT 1 Fet类型：2 N 沟道（双）共源 Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：120V 电流-连续漏极(id)：3.4A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411184 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1190" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2102_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(17) "917-EPC2102ENG-ND" ["zzsbh"]=> string(10) "EPC2102ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 60V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "4.4 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "6.8nC @ 5V" ["bt_vds_srdr"]=> string(11) "830pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2102ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 60V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1190 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411190 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1191" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2101_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(17) "917-EPC2101ENG-ND" ["zzsbh"]=> string(10) "EPC2101ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 60V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(10) "9.5A，38A" ["bt_id_vgs_rds"]=> string(22) "11.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 3mA" ["bt_vgs_sjdh"]=> string(10) "2.7nC @ 5V" ["bt_vds_srdr"]=> string(11) "300pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2101ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 60V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1191 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V 电流-连续漏极(id)：9.5A，38A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411191 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1228" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2105_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(20) "917-EPC2105ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2105ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "GANFET 2NCH 80V 9.5A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(4) "9.5A" ["bt_id_vgs_rds"]=> string(22) "14.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(10) "2.5nC @ 5V" ["bt_vds_srdr"]=> string(11) "300pF @ 40V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2105ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET 2NCH 80V 9.5A DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1228 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：80V 电流-连续漏极(id)：9.5A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411228 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1229" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2104_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(20) "917-EPC2104ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2104ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "GANFET 2NCH 100V 23A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "6.3 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 5.5mA" ["bt_vgs_sjdh"]=> string(8) "7nC @ 5V" ["bt_vds_srdr"]=> string(11) "800pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2104ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET 2NCH 100V 23A DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1229 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411229 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "2825" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2103_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(17) "917-EPC2103ENG-ND" ["zzsbh"]=> string(10) "EPC2103ENG" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 80V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "5.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "6.5nC @ 5V" ["bt_vds_srdr"]=> string(11) "760pF @ 40V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2103ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 80V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2825 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：80V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10412825 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3094" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2100_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "EPC2100ENGRT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "GANFET 2 N-CH 30V 9.5A/38A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "10A（Ta），40A（Ta）" ["bt_id_vgs_rds"]=> string(45) "8.2 毫欧 @ 25A，5V，2.1 毫欧 @ 25A，5V" ["bt_id_vgs_zdz"]=> string(24) "2.5V @ 4mA，2.5V @ 16mA" ["bt_vgs_sjdh"]=> string(24) "4.9nC @ 15V，19nC @ 15V" ["bt_vds_srdr"]=> string(26) "475pF @ 15V，1960pF @ 15V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515397896" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2100ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET 2 N-CH 30V 9.5A/38A DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3094 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：30V 电流-连续漏极(id)：10A（Ta），40A（Ta）最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413094 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3095" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2102_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "EPC2102ENGRT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "GANFET 2 N-CHANNEL 60V 23A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "23A（Tj）" ["bt_id_vgs_rds"]=> string(21) "4.4 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "6.8nC @ 5V" ["bt_vds_srdr"]=> string(11) "830pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515397897" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2102ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET 2 N-CHANNEL 60V 23A DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3095 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V 电流-连续漏极(id)：23A（Tj）最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413095 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3134" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2106_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "https://www.makuwang.com/Public/Mark/img/mk.png" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(7) "EPC2106" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "GANFET TRANS SYM 100V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "1.7A" ["bt_id_vgs_rds"]=> string(19) "70 毫欧 @ 2A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 600µA" ["bt_vgs_sjdh"]=> string(11) "0.73nC @ 5V" ["bt_vds_srdr"]=> string(10) "75pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398065" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2106复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS SYM 100V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3134 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413134 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3135" ["pdf_add"]=> string(3) " - " ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg" ["images"]=> string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC210xENGRT.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(7) "EPC2108" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "GANFET 3 N-CH 60V/100V 9BGA" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(37) "3 N 沟道（半桥 + 同步自举）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(10) "60V，100V" ["dl_lxlj"]=> string(12) "1.7A，500mA" ["bt_id_vgs_rds"]=> string(47) "190 毫欧 @ 2.5A，5V，3.3 欧姆 @ 2.5A，5V" ["bt_id_vgs_zdz"]=> string(28) "2.5V @ 100µA，2.5V @ 20µA" ["bt_vgs_sjdh"]=> string(26) "0.22nC @ 5V，0.044nC @ 5V" ["bt_vds_srdr"]=> string(22) "22pF @ 30V，7pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(7) "9-VFBGA" ["gysqjfz"]=> string(17) "9-BGA (1.35X1.35)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "9" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398065" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2108复制状态：在售修改品牌： EPC复制封装：9-BGA (1.35X1.35) 外壳：9-VFBGA 描述： GANFET 3 N-CH 60V/100V 9BGA	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3135 ) LIMIT 1 Fet类型：3 N 沟道（半桥 + 同步自举） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V，100V 电流-连续漏极(id)：1.7A，500mA 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413135 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3136" ["pdf_add"]=> string(78) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2107_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg" ["images"]=> string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC210xENGRT.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(7) "EPC2107" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(23) "GANFET 3 N-CH 100V 9BGA" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(37) "3 N 沟道（半桥 + 同步自举）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "1.7A，500mA" ["bt_id_vgs_rds"]=> string(43) "320 毫欧 @ 2A，5V，3.3 欧姆 @ 2A，5V" ["bt_id_vgs_zdz"]=> string(28) "2.5V @ 100µA，2.5V @ 20µA" ["bt_vgs_sjdh"]=> string(26) "0.16nC @ 5V，0.044nC @ 5V" ["bt_vds_srdr"]=> string(22) "16pF @ 50V，7pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(7) "9-VFBGA" ["gysqjfz"]=> string(17) "9-BGA (1.35X1.35)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "9" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398065" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2107复制状态：在售修改品牌： EPC复制封装：9-BGA (1.35X1.35) 外壳：9-VFBGA 描述： GANFET 3 N-CH 100V 9BGA	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3136 ) LIMIT 1 Fet类型：3 N 沟道（半桥 + 同步自举） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A，500mA 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413136 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3138" ["pdf_add"]=> string(3) " - " ["images_sw"]=> string(1) " " ["images_mk"]=> string(51) "//media.digikey.com/Photos/EPC/MFG_EPC2111ENGRT.jpg" ["images"]=> string(73) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2111ENGRT.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "EPC2111ENGRT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "TRANS GAN ASYMMETRICAL HALF BRID" ["xl"]=> string(0) "" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "16A（Ta）" ["bt_id_vgs_rds"]=> string(42) "19 毫欧 @ 15A，5V，8 毫欧 @ 15A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 5mA" ["bt_vgs_sjdh"]=> string(23) "2.2nC @ 5V，5.7nC @ 5V" ["bt_vds_srdr"]=> string(25) "230pF @ 15V，590pF @ 15V" ["gn_zdz"]=> string(0) "" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398072" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2111ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN ASYMMETRICAL HALF BRID	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3138 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：30V 电流-连续漏极(id)：16A（Ta）最大功率值：工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413138 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3139" ["pdf_add"]=> string(88) "//media.digikey.com/pdf/Data%20Sheets/Efficient%20Power%20Conversion%20PDFs/EPC2100~.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(7) "EPC2100" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "GAN TRANS ASYMMETRICAL HALF BRID" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "10A（Ta），40A（Ta）" ["bt_id_vgs_rds"]=> string(45) "8.2 毫欧 @ 25A，5V，2.1 毫欧 @ 25A，5V" ["bt_id_vgs_zdz"]=> string(24) "2.5V @ 4mA，2.5V @ 16mA" ["bt_vgs_sjdh"]=> string(24) "4.9nC @ 15V，19nC @ 15V" ["bt_vds_srdr"]=> string(26) "475pF @ 15V，1960pF @ 15V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398073" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2100复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GAN TRANS ASYMMETRICAL HALF BRID	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3139 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：30V 电流-连续漏极(id)：10A（Ta），40A（Ta）最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413139 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(69) { ["id"]=> string(3) "523" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2106_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(51) "//media.digikey.com/Photos/EPC/MFG_EPC2106ENGRT.jpg" ["images"]=> string(73) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2106ENGRT.jpg" ["ljbh"]=> string(20) "917-EPC2106ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2106ENGRT" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "2000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "GAN TRANS 2N-CH 100V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "1.7A" ["bt_id_vgs_rds"]=> string(19) "70 毫欧 @ 2A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 600µA" ["bt_vgs_sjdh"]=> string(11) "0.73nC @ 5V" ["bt_vds_srdr"]=> string(10) "75pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2106ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GAN TRANS 2N-CH 100V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 523 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：1041523 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(3) "545" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2103_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(20) "917-EPC2103ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2103ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "GANFET TRANS SYM HALF BRDG 80V" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "5.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "6.5nC @ 5V" ["bt_vds_srdr"]=> string(12) "7600pF @ 40V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2103ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS SYM HALF BRDG 80V	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 545 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：80V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-	类别：多通道MOS管丝印：(请登录) 料号：1041545 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(3) "622" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2105_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(17) "917-EPC2105ENG-ND" ["zzsbh"]=> string(10) "EPC2105ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(3) "180" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 80V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(10) "9.5A，38A" ["bt_id_vgs_rds"]=> string(22) "14.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(10) "2.5nC @ 5V" ["bt_vds_srdr"]=> string(11) "300pF @ 40V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "散装" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2105ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 80V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 622 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：80V 电流-连续漏极(id)：9.5A，38A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：1041622 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 散装修改个个散装咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1133" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2108_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg" ["images"]=> string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC210xENGRT.jpg" ["ljbh"]=> string(20) "917-EPC2108ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2108ENGRT" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "TRANS GAN 3N-CH BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(37) "3 N 沟道（半桥 + 同步自举）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(10) "60V，100V" ["dl_lxlj"]=> string(12) "1.7A，500mA" ["bt_id_vgs_rds"]=> string(22) "190 毫欧 @ 2.5A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 200µA" ["bt_vgs_sjdh"]=> string(11) "0.22nC @ 5V" ["bt_vds_srdr"]=> string(10) "22pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2108ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 3N-CH BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1133 ) LIMIT 1 Fet类型：3 N 沟道（半桥 + 同步自举） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V，100V 电流-连续漏极(id)：1.7A，500mA 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411133 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1135" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2107_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg" ["images"]=> string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC210xENGRT.jpg" ["ljbh"]=> string(20) "917-EPC2107ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2107ENGRT" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "TRANS GAN 3N-CH 100V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(37) "3 N 沟道（半桥 + 同步自举）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "1.7A，500mA" ["bt_id_vgs_rds"]=> string(20) "320 毫欧 @ 2A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 100µA" ["bt_vgs_sjdh"]=> string(11) "0.16nC @ 5V" ["bt_vds_srdr"]=> string(10) "16pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2107ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 3N-CH 100V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1135 ) LIMIT 1 Fet类型：3 N 沟道（半桥 + 同步自举） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A，500mA 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411135 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1173" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2100_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(17) "917-EPC2100ENG-ND" ["zzsbh"]=> string(10) "EPC2100ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 30V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(10) "9.5A，38A" ["bt_id_vgs_rds"]=> string(19) "8 毫欧 @ 25A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 4mA" ["bt_vgs_sjdh"]=> string(11) "3.5nC @ 15V" ["bt_vds_srdr"]=> string(11) "380pF @ 15V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2100ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 30V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1173 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：30V 电流-连续漏极(id)：9.5A，38A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411173 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1174" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2104_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(17) "917-EPC2104ENG-ND" ["zzsbh"]=> string(10) "EPC2104ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "TRANS GAN 2N-CH 100V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "6.3 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 5.5mA" ["bt_vgs_sjdh"]=> string(8) "7nC @ 5V" ["bt_vds_srdr"]=> string(11) "800pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2104ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 100V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1174 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411174 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1184" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2110_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(51) "//media.digikey.com/Photos/EPC/MFG_EPC2110ENGRT.jpg" ["images"]=> string(73) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2110ENGRT.jpg" ["ljbh"]=> string(20) "917-EPC2110ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2110ENGRT" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "GAN TRANS 2N-CH 120V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(25) "2 N 沟道（双）共源" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "120V" ["dl_lxlj"]=> string(4) "3.4A" ["bt_id_vgs_rds"]=> string(19) "60 毫欧 @ 4A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 700µA" ["bt_vgs_sjdh"]=> string(10) "0.8nC @ 5V" ["bt_vds_srdr"]=> string(10) "80pF @ 60V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2110ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GAN TRANS 2N-CH 120V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1184 ) LIMIT 1 Fet类型：2 N 沟道（双）共源 Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：120V 电流-连续漏极(id)：3.4A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411184 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1190" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2102_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(17) "917-EPC2102ENG-ND" ["zzsbh"]=> string(10) "EPC2102ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 60V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "4.4 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "6.8nC @ 5V" ["bt_vds_srdr"]=> string(11) "830pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2102ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 60V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1190 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411190 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1191" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2101_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(17) "917-EPC2101ENG-ND" ["zzsbh"]=> string(10) "EPC2101ENG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 60V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(10) "9.5A，38A" ["bt_id_vgs_rds"]=> string(22) "11.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 3mA" ["bt_vgs_sjdh"]=> string(10) "2.7nC @ 5V" ["bt_vds_srdr"]=> string(11) "300pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2101ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 60V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1191 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V 电流-连续漏极(id)：9.5A，38A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411191 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1228" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2105_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(20) "917-EPC2105ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2105ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "GANFET 2NCH 80V 9.5A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(4) "9.5A" ["bt_id_vgs_rds"]=> string(22) "14.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(10) "2.5nC @ 5V" ["bt_vds_srdr"]=> string(11) "300pF @ 40V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2105ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET 2NCH 80V 9.5A DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1228 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：80V 电流-连续漏极(id)：9.5A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411228 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1229" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2104_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(20) "917-EPC2104ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2104ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "GANFET 2NCH 100V 23A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "6.3 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 5.5mA" ["bt_vgs_sjdh"]=> string(8) "7nC @ 5V" ["bt_vds_srdr"]=> string(11) "800pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2104ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET 2NCH 100V 23A DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1229 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411229 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "2825" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2103_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(17) "917-EPC2103ENG-ND" ["zzsbh"]=> string(10) "EPC2103ENG" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 2N-CH 80V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(3) "23A" ["bt_id_vgs_rds"]=> string(21) "5.5 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "6.5nC @ 5V" ["bt_vds_srdr"]=> string(11) "760pF @ 40V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2103ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 2N-CH 80V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2825 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：80V 电流-连续漏极(id)：23A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10412825 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3094" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2100_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "EPC2100ENGRT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "GANFET 2 N-CH 30V 9.5A/38A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "10A（Ta），40A（Ta）" ["bt_id_vgs_rds"]=> string(45) "8.2 毫欧 @ 25A，5V，2.1 毫欧 @ 25A，5V" ["bt_id_vgs_zdz"]=> string(24) "2.5V @ 4mA，2.5V @ 16mA" ["bt_vgs_sjdh"]=> string(24) "4.9nC @ 15V，19nC @ 15V" ["bt_vds_srdr"]=> string(26) "475pF @ 15V，1960pF @ 15V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515397896" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2100ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET 2 N-CH 30V 9.5A/38A DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3094 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：30V 电流-连续漏极(id)：10A（Ta），40A（Ta）最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413094 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3095" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2102_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2102_EPC2103_EPC2104.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "EPC2102ENGRT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "GANFET 2 N-CHANNEL 60V 23A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "23A（Tj）" ["bt_id_vgs_rds"]=> string(21) "4.4 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "6.8nC @ 5V" ["bt_vds_srdr"]=> string(11) "830pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515397897" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2102ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET 2 N-CHANNEL 60V 23A DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3095 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V 电流-连续漏极(id)：23A（Tj）最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413095 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3134" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2106_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "https://www.makuwang.com/Public/Mark/img/mk.png" ["images"]=> string(54) "https://www.chenkeiot.com/Public/Mark/img/red_logo.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(7) "EPC2106" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "GANFET TRANS SYM 100V BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "1.7A" ["bt_id_vgs_rds"]=> string(19) "70 毫欧 @ 2A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 600µA" ["bt_vgs_sjdh"]=> string(11) "0.73nC @ 5V" ["bt_vds_srdr"]=> string(10) "75pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398065" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2106复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS SYM 100V BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3134 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413134 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3135" ["pdf_add"]=> string(3) " - " ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg" ["images"]=> string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC210xENGRT.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(7) "EPC2108" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "GANFET 3 N-CH 60V/100V 9BGA" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(37) "3 N 沟道（半桥 + 同步自举）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(10) "60V，100V" ["dl_lxlj"]=> string(12) "1.7A，500mA" ["bt_id_vgs_rds"]=> string(47) "190 毫欧 @ 2.5A，5V，3.3 欧姆 @ 2.5A，5V" ["bt_id_vgs_zdz"]=> string(28) "2.5V @ 100µA，2.5V @ 20µA" ["bt_vgs_sjdh"]=> string(26) "0.22nC @ 5V，0.044nC @ 5V" ["bt_vds_srdr"]=> string(22) "22pF @ 30V，7pF @ 30V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(7) "9-VFBGA" ["gysqjfz"]=> string(17) "9-BGA (1.35X1.35)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "9" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398065" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2108复制状态：在售修改品牌： EPC复制封装：9-BGA (1.35X1.35) 外壳：9-VFBGA 描述： GANFET 3 N-CH 60V/100V 9BGA	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3135 ) LIMIT 1 Fet类型：3 N 沟道（半桥 + 同步自举） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：60V，100V 电流-连续漏极(id)：1.7A，500mA 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413135 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3136" ["pdf_add"]=> string(78) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2107_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(47) "//media.digikey.com/Photos/EPC/EPC210xENGRT.jpg" ["images"]=> string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC210xENGRT.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(7) "EPC2107" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(23) "GANFET 3 N-CH 100V 9BGA" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(37) "3 N 沟道（半桥 + 同步自举）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "1.7A，500mA" ["bt_id_vgs_rds"]=> string(43) "320 毫欧 @ 2A，5V，3.3 欧姆 @ 2A，5V" ["bt_id_vgs_zdz"]=> string(28) "2.5V @ 100µA，2.5V @ 20µA" ["bt_vgs_sjdh"]=> string(26) "0.16nC @ 5V，0.044nC @ 5V" ["bt_vds_srdr"]=> string(22) "16pF @ 50V，7pF @ 50V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(7) "9-VFBGA" ["gysqjfz"]=> string(17) "9-BGA (1.35X1.35)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "9" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398065" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2107复制状态：在售修改品牌： EPC复制封装：9-BGA (1.35X1.35) 外壳：9-VFBGA 描述： GANFET 3 N-CH 100V 9BGA	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3136 ) LIMIT 1 Fet类型：3 N 沟道（半桥 + 同步自举） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A，500mA 最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413136 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3138" ["pdf_add"]=> string(3) " - " ["images_sw"]=> string(1) " " ["images_mk"]=> string(51) "//media.digikey.com/Photos/EPC/MFG_EPC2111ENGRT.jpg" ["images"]=> string(73) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2111ENGRT.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "EPC2111ENGRT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "TRANS GAN ASYMMETRICAL HALF BRID" ["xl"]=> string(0) "" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "16A（Ta）" ["bt_id_vgs_rds"]=> string(42) "19 毫欧 @ 15A，5V，8 毫欧 @ 15A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 5mA" ["bt_vgs_sjdh"]=> string(23) "2.2nC @ 5V，5.7nC @ 5V" ["bt_vds_srdr"]=> string(25) "230pF @ 15V，590pF @ 15V" ["gn_zdz"]=> string(0) "" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398072" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2111ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN ASYMMETRICAL HALF BRID	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3138 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：30V 电流-连续漏极(id)：16A（Ta）最大功率值：工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413138 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(69) { ["id"]=> string(4) "3139" ["pdf_add"]=> string(88) "//media.digikey.com/pdf/Data%20Sheets/Efficient%20Power%20Conversion%20PDFs/EPC2100~.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC210xENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC210xENG.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(7) "EPC2100" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "GAN TRANS ASYMMETRICAL HALF BRID" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "10A（Ta），40A（Ta）" ["bt_id_vgs_rds"]=> string(45) "8.2 毫欧 @ 25A，5V，2.1 毫欧 @ 25A，5V" ["bt_id_vgs_zdz"]=> string(24) "2.5V @ 4mA，2.5V @ 16mA" ["bt_vgs_sjdh"]=> string(24) "4.9nC @ 15V，19nC @ 15V" ["bt_vds_srdr"]=> string(26) "475pF @ 15V，1960pF @ 15V" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1515398073" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： EPC2100复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GAN TRANS ASYMMETRICAL HALF BRID	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3139 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：GaNFET（氮化镓）漏源极电压(vdss)：30V 电流-连续漏极(id)：10A（Ta），40A（Ta）最大功率值：- 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413139 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车

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