产品属性 | 属性值 |
---|---|
系列 | |
Fet类型: | N—Channel沟道 |
漏源极电压(vdss): | 60V |
电流-连续漏极(id): | 120A |
Vgs(最大值): | |
功率-最大值: | |
工作温度: |
同类热销产品 | ||
---|---|---|
![]() |
RU80N15SRui Jun semiconductorTO26341717
|
![]() |
![]() |
BLM04N08-BBeiLing/贝岭TO26353692
|
![]() |
![]() |
BLM06N10-BBeiLing/贝岭TO26353694
|
![]() |
![]() |
BLM08N10-BBeiLing/贝岭TO26353704
|
![]() |
![]() |
IRFS17N20DTRLP-VBVBsemi/微碧TO26355206
N—Channel沟道,200V,40A,RDS(ON),48mΩ@10V,20Vgs(±V);3.3Vth(V) 封装:TO263
|
![]() |
![]() |
FS23N15DP-VBVBsemi/微碧TO26355207
N—Channel沟道,200V,40A,RDS(ON),48mΩ@10V,20Vgs(±V);3.3Vth(V) 封装:TO263
|
![]() |
![]() |
VBL1254NVBsemi/微碧TO26355209
N—Channel沟道,250V,45A,RDS(ON),47mΩ@10V,56.4mΩ@4.5V,20Vgs(±V);2Vth(V) 封装:TO263
|
![]() |
![]() |
RJK5012DPE-00-J3-VBVBsemi/微碧TO26355212
N—Channel沟道,650V,12A,RDS(ON),800mΩ@10V,20Vgs(±V);3.5Vth(V) 封装:TO263
|
![]() |
![]() |
FDB047N10-VBVBsemi/微碧TO26355230
N沟道,100V,110A,RDS(ON),5mΩ@10V,20Vgs(±V);2Vth(V);TO263
|
![]() |
![]() |
PSMN3R8-100BS-VBVBsemi/微碧TO26355234
N沟道,100V,110A,RDS(ON),5mΩ@10V,20Vgs(±V);2Vth(V);TO263
|
![]() |
![]() |
PSMN5R6-100BS-VBVBsemi/微碧TO26355235
N沟道,100V,110A,RDS(ON),5mΩ@10V,20Vgs(±V);2Vth(V);TO263
|
![]() |
![]() |
RU1H130S-VBVBsemi/微碧TO26355236
N沟道,100V,110A,RDS(ON),5mΩ@10V,20Vgs(±V);2Vth(V);TO263
|
![]() |