产品属性 | 属性值 |
---|---|
系列 | - |
存储器格式: | DRAM |
存储容量: | 256Mb (16M x 16) |
存储器接口: | 5.4ns |
电压-电源: | 3V ~ 3.6V |
存储器类型: | 易失 |
工作温度: | 0°C ~ 70°C(TA) |
同类热销产品 | ||
---|---|---|
![]() |
AS4C16M16S-6BINAlliance Memory, Inc.54-TFBGA(8x8)2735
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42SM16160K-75BLIISSI/芯成54-TFBGA(8x8)3118
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42RM16160K-6BLIISSI/芯成54-TFBGA(8x8)3119
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS45S16160G-7BLA2ISSI/芯成54-TFBGA(8x8)3149
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42S83200G-7BLI-TRISSI/芯成54-TFBGA(8x8)3262
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42SM16160K-6BLI-TRISSI/芯成54-TFBGA(8x8)3271
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42VM16160K-75BLI-TRISSI/芯成54-TFBGA(8x8)3276
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42SM16160K-75BLI-TRISSI/芯成54-TFBGA(8x8)3279
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42RM16160K-6BLI-TRISSI/芯成54-TFBGA(8x8)3291
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42RM16160K-75BLIISSI/芯成54-TFBGA(8x8)3312
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42VM16160K-6BLIISSI/芯成54-TFBGA(8x8)3313
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |
![]() |
IS42S83200G-7BLIISSI/芯成54-TFBGA(8x8)3326
IC DRAM 256M PARALLEL 54TFBGA
|
![]() |