产品属性 | 属性值 |
---|---|
系列 | - |
存储器格式: | DRAM |
存储容量: | 512Mb (64M x 8) |
存储器接口: | 450ps |
电压-电源: | 1.7V ~ 1.9V |
存储器类型: | 易失 |
工作温度: | 0°C ~ 70°C(TA) |
同类热销产品 | ||
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IS43DR86400D-3DBIISSI/芯成60-TWBGA(8x10.5)3122
IC DRAM 512M PARALLEL 60TWBGA
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IS43DR81280B-25DBLIISSI/芯成60-TWBGA(8x10.5)3137
IC DRAM 1G PARALLEL 60TWBGA
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IS43DR81280B-3DBLIISSI/芯成60-TWBGA(8x10.5)3142
IC DRAM 1G PARALLEL 60TWBGA
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IS43DR86400C-3DBIISSI/芯成60-TWBGA(8x10.5)3178
IC DRAM 512M PARALLEL 60TWBGA
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IS43DR86400C-25DBLISSI/芯成60-TWBGA(8x10.5)3242
IC DRAM 512M PARALLEL 60TWBGA
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IS43DR81280B-3DBLI-TRISSI/芯成60-TWBGA(8x10.5)3269
IC DRAM 1G PARALLEL 60TWBGA
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IS43DR81280B-25DBLI-TRISSI/芯成60-TWBGA(8x10.5)3277
IC DRAM 1G PARALLEL 60TWBGA
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IS43DR86400D-3DBLIISSI/芯成60-TWBGA(8x10.5)3283
IC DRAM 512M PARALLEL 60TWBGA
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IS43DR86400C-3DBI-TRISSI/芯成60-TWBGA(8x10.5)3300
IC DRAM 512M PARALLEL 60TWBGA
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IS43DR86400D-3DBLI-TRISSI/芯成60-TWBGA(8x10.5)3352
IC DRAM 512M PARALLEL 60TWBGA
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IS43DR86400D-25DBLIISSI/芯成60-TWBGA(8x10.5)3364
IC DRAM 512M PARALLEL 60TWBGA
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IS43DR86400C-25DBLIISSI/芯成60-TWBGA(8x10.5)3382
IC DRAM 512M PARALLEL 60TWBGA
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