产品属性 | 属性值 |
---|---|
系列 | - |
存储器格式: | DRAM |
存储容量: | 512Mb (16M x 32) |
存储器接口: | 5.4ns |
电压-电源: | 3V ~ 3.6V |
存储器类型: | 易失 |
工作温度: | 0°C ~ 70°C(TA) |
同类热销产品 | ||
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AS4C4M32S-7BCNTRAlliance Memory, Inc.90-TFBGA(8x13)232
IC DRAM 128M PARALLEL 90TFBGA
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AS4C4M32S-6BINTRAlliance Memory, Inc.90-TFBGA(8x13)376
IC DRAM 128M PARALLEL 90TFBGA
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AS4C2M32S-7BCNTRAlliance Memory, Inc.90-TFBGA(8x13)857
IC DRAM 64M PARALLEL 90TFBGA
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AS4C8M32S-6BINAlliance Memory, Inc.90-TFBGA(8x13)1808
IC DRAM 256M PARALLEL 90TFBGA
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AS4C2M32S-6BINTRAlliance Memory, Inc.90-TFBGA(8x13)2248
IC DRAM 64M PARALLEL 90TFBGA
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AS4C8M32S-6BINTRAlliance Memory, Inc.90-TFBGA(8x13)2273
IC DRAM 256M PARALLEL 90TFBGA
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AS4C8M32S-7BCNTRAlliance Memory, Inc.90-TFBGA(8x13)3027
IC DRAM 256M PARALLEL 90TFBGA
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IS43LR32160C-6BL-TRISSI/芯成90-TFBGA(8x13)3090
IC DRAM 512M PARALLEL 90TFBGA
|
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IS43LR32800G-6BLI-TRISSI/芯成90-TFBGA(8x13)3096
IC DRAM 256M PARALLEL 90TFBGA
|
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IS43LR32800G-6BLISSI/芯成90-TFBGA(8x13)3097
IC DRAM 256M PARALLEL 90TFBGA
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IS45S32800J-6BLA1-TRISSI/芯成90-TFBGA(8x13)3100
IC DRAM 256M PARALLEL 90TFBGA
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IS45S32400F-6BLA2ISSI/芯成90-TFBGA(8x13)3121
IC DRAM 128M PARALLEL 90TFBGA
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